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中子辐照金刚石生成卡宾碳   总被引:3,自引:3,他引:0  
金刚石在中子辐照下发生相转变,得到了线性结构的卡宾碳。所得产物为覆盖金刚石表面的黑色薄膜状物质,其拉曼光谱在2191cm-1处有强峰,归属于C≡C伸缩振动;同时,其俄歇电子谱的峰位与金刚石相比有5eV的位移,证实了卡宾碳的存在。在中子辐照条件下,金刚石向卡宾碳的转化可能是通过碳原子堆垛形式发生变化而实现的。  相似文献   
3.
The deuterium (hydrogen) passivation effect on acceptors in boron-doped CVD homoepitaxial diamond was studied by electrical (Hall-effect) and secondary ion mass spectroscopy (SIMS) measurements. Deuterium was incorporated into the samples using microwave (MW) deuterium plasma at 673 K for 2–24 h. We observed the progress of acceptor passivation with p-type conduction, which finally resulted in a highly resistive state.  相似文献   
4.
Theoretical predictions using a modified radical species ternary diagram for C–H–O system indicate that addition of sulfur expands the C–H–O gas phase compositional window for diamond deposition. Sulfur addition to no-growth domain increases the carbon super-saturation by binding the oxygen and the addition of sulfur to the non-diamond domain reduces the heavy carbon super-saturation by decreasing CnHm species concentration in the gas phase. The overall effect of sulfur addition to gas phase mixtures is characterized as that of oxygen addition to the C–H system, i.e. expansion of the compositional window over which diamond can be deposited from the gas phase. In addition, the increasing sulfur concentration to diamond domain feed gases beyond 2000 ppm did not affect the steady state gas phase composition but the quality of diamond was reduced.  相似文献   
5.
A theoretical model is presented to describe the effect of ion beam bombardment rate on the formation of tetrahedral amorphous carbon (ta-C) films. The critical ion energy, Ec, corresponding to a 50% sp3 content in the films, is found to be dependent on both the effective thermal resistance and the ion beam bombardment rate. In the model, the ‘window’ width in the ion energy scale for the formation of ta-C material increases with decreasing deposition rate and with a reduction in the effective thermal resistance, until limited by lower and upper boundary thresholds. Experimental data are reproduced by the model. The plasmon energy, which correlates with sp3 fraction, is found experimentally of be higher for lower deposition rate and smaller effective thermal resistance. Data points for high sp3 content ta-C films deposited on silicon substrates at room temperature occupy a region in the ion energy-deposition rate (E-r) diagram similar to that predicated from the theory.  相似文献   
6.
金刚石薄膜制备和评价   总被引:2,自引:0,他引:2  
采用平直钨丝作热解源,并借助钨丝支架的弹性恢复力,较好地解决了热丝热解化学气相沉积法(HFCVD)合成金刚石过程中热解丝的变形问题.样品独立加热,基片温度、钨丝温度、钨丝与样品基片距离均可独立调节.装置改进后,在Si(100)上合成了面积大约45mm×25mm的比较均匀的金刚石膜.用扫描电子显微镜(SEM)、Raman光谱和X射线衍射仪对制备的金刚石膜进行了分析.  相似文献   
7.
To synthesize diamond films by microwave plasma enhanced chemical vapor deposition (MPECVD), the methane concentration (CH4/H2)plays a crucial role. It is well-known that there always exists a critical methane concentration (≤0.6%) only below which a good quality diamond film can be obtained. In this study, however, the phenomena of diamond synthesis resulting from high carbon concentration conditions were observed. The molten metals, e.g., Ag, Cu, were used as the deposition substrates on which crystalline diamonds can be achieved from a methane content of CH4/H2≥6% or even from solid carbon sources. These results suggest that there may exist a low methane content boundary layer (<0.6%) in the proximity of molten metal surface on which suitable species, CH, CH+, Hα and Hβ are composed for the diamond nucleation and growth similar to the condition as in the conventional low methane contents. The molten metal inclines to dissolve other forms of carbonaceous materials other than diamond, and thus keeps a much higher steady supply of carbon atoms that enhances the quality as well as the growth rate of the forming diamonds. Received: 23 June 2001 / Accepted: 23 July 2001  相似文献   
8.
用发射天线式微波等离子体CVD装置沉积大面积金刚石薄膜   总被引:1,自引:0,他引:1  
在国内首次研制成功了高气压发射天线式微波等离子体辅助化学气相沉积金刚石薄膜装置,用该装置成功地在3英寸的单晶硅衬底上沉积了Φ70mm的金刚石薄膜。这一成果填补了国内空白,对我国金刚石薄膜研究领域的设备更新换代和开发应用具有重要意义。  相似文献   
9.
Y. Takeuchi  T. Kawai 《CIRP Annals》2006,55(1):107-110
In recent years, ultra-precision micromachining technology has been used in a variety of fields such as optical instruments, electronic devices, medical equipments, etc. At present, it is essential to meet the requirement of producing various shapes, one of which is a structure with a high aspect ratio. Such structures are applied, for example, to a shaft of micro robot, a long part of microactuator and micromachine, a microneedle for syringe, etc. However, due to its fragile nature, it is extremely difficult to fabricate the structure with a high aspect ratio since it is easily damaged during cutting. It is intended to produce micro towers with high aspect ratios by applying the ultra-precision milling technology using a single crystal diamond cutting tool. The method enables accurate creation of a variety of microstructures with high aspect ratios. In addition, the study also proposes a new machining method to create microneedle arrays, avoiding the contact of cutting edge with already machined parts again. As a result, it is concluded that the proposed method has the potential of producing a variety of microstructures with high aspect ratios.  相似文献   
10.
The wide scattering in tool life of natural mono-crystalline diamond tools is considered to depend on intrinsic crystalline defects due to nitrogen impurities in raw diamond. In this paper, the correlation was investigated between the amounts and types of the impurity evaluated by infrared absorption (IRA) and the crater wear and chipping resistances. As a result, diamonds including less total amount of impurity show larger wear resistance and that with larger amount of B2-aggregates show larger chipping resistance. This suggests that the inspection by IRA can be a useful method for screening of raw diamond for highly durable cutting tools.  相似文献   
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