A model for semiconductor quantum dot molecule based on the current spin density functional theory

Based on the current spin density functional theory, a theoretical model of three vertically aligned semiconductor quantum dots is proposed and numerically studied. This quantum dot molecule (QDM) model is treated with realistic hard-wall confinement potential and external magnetic field in three-dimensional setting. Using the effective-mass approximation with band nonparabolicity, the many-body Hamiltonian results in a cubic eigenvalue problem from a finite difference discretization. A self-consistent algorithm for solving the Schrödinger-Poisson system by using the Jacobi-Davidson method and GMRES is given to illustrate the Kohn-Sham orbitals and energies of six electrons in the molecule with some magnetic fields. It is shown that the six electrons residing in the central dot at zero magnetic field can be changed to such that each dot contains two electrons with some feasible magnetic field. The Förster-Dexter resonant energy transfer may therefore be generated by two individual QDMs. This may motivate a new paradigm of Fermionic qubits for quantum computing in solid-state systems.     

MPTA型原油脱金属剂的工业应用

在对高金属含量原油进行初步评价的基础上，利用SH—Ⅰ型电脱盐试验仪对自主开发的MPTA型原油脱金属剂进行了原油脱金属的实验室研究。结果表明，当MPTA型脱金属剂加入量为250μg／g时，钙的脱除率可达97．4％，并且对其它金属元素，如镍、铁、钠、锰、铝和钒也有明显的脱除效果。该剂在山东恒源石油化工股份有限公司重交沥青车间500kt／a的电脱盐装置上进行原油脱金属工业试验的结果表明，经过二级电脱盐处理后，钙的脱除率达到99．1％，钠的脱除率为94．6％，铁的脱除率为82．9％，并可在一定程度上降低原油中镍和铜的含量。使用MPTA型原油脱金属剂显著降低了一、二级电脱盐装置的电场电流，有利于炼油厂的节能降耗。     

Optimal H∞ general distance problem with degree constraint

In this paper the optimal H_∞, general distance problem, for continuous-time systems, with a prescribed degree on the solution is studied. The approach is based on designing the Hankel singular values using an imbedding idea. The problem is first imbedded into another problem with desirable characteristics on the Hankel singular values, then the solution to the original problem is retracted via a compression. The result is applicable to both the one-block and the four-block problems. A special case is given for illustration.     

新型交流脉冲MIG焊接法的研究

采用自行研制的具有方框形外特性的交流脉冲MIG焊接电源 ,又设计了双凹形焊接电流波形 ,即过零前后的电流波形均为脉冲大电流 ,有利于交流脉冲MIG焊接电弧的连续稳定。按照这个新型交流脉冲MIG焊接方法 ,不必加任何稳弧措施 ,可实现电弧的稳定燃烧 ,解决了电弧磁偏吹的问题 ,具有较好的焊接工艺性能 ,用于压力容器的全位置焊接和铝焊接均有很好的焊缝成型     

Magnetic field dependence of shielding current density in Y-Ba-Cu-O rings at 77 K

A method for contactless measurement of the shielding critical current density and its dependence on the external magnetic field is described and analyzed. The obtained values are compared with those measured resistively on two different samples. It is shown that the shielding critical current densityJ _cs and the intergranular transport current densityJ _cr are identical if the measurement conditions are similar. A degradation ofJ _cs measured in the external field with AC ripple has been observed.     

微型计算机的接触电流和接地线电流的测量

介绍了微型计算机的两种不同类型的泄漏电流的危害及其测量方法。     

The solution of the inverse problem of gravitational potential using a set of measurements of different field elements

A numerical solution of the inverse problem of the gravitational field at a single point is obtained using six field elements for a point, a spherical cap, a differential spherical sector and a vertical segment. In the system of six equations obtained, the unknowns are the mass of the body, the depth of its center, and the second, third, and fourth degree moments. The accuracy of the solution of this system is ten times higher than when using three field elements. __________ Translated from Izmeritel’naya Tekhnika, No. 5, pp. 3–8, May, 2007.     

合理开发利用钨矿资源 促进钨矿业可持续发展

简述了我国钨矿业概况、现有采选技术水平及钨矿加工利用率 ;从资源配置出发 ,阐述了钨矿业发展存在的几个主要问题 ,并且针对性地提出了可持续发展的几点建议。     

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.     

Modeling and Analysis of a Long Thin Conducting Stripline

A long thin conducting stripline embedded in a dielectric and centered between two large conducting plates, i.e., the stripline environment, is considered. The stripline is modeled as infinitely long, infinitely thin, and perfectly conducting by first considering a stripline of finite length, thickness, and conductivity in a dielectric layer. Starting from Maxwell's equations and assuming that the current on the stripline is a propagating wave in length direction, asymptotic expressions for the fields inside and in the neighbourhood of the stripline are deduced. These expressions are used to model the stripline in the stripline environment, which leads to a boundary-value problem for the electric potential. This problem is solved by two different approaches, leading to integral equations for the current and for an auxiliary function describing the electric potential. A relation between the current and the auxiliary function is deduced, which is used to obtain asymptotic expressions for current and impedance. Results are compared with a numerical solution of the integral equation for the current and with results in literature.