激电法找油的原理及应用

激电法是非地震物探手段中的一种，由于油气在向上渗透的过程中会与地层发生一系列的生物。化学反应而形成次生黄铁矿，激电法正是通过发现油气藏上方形成的次生黄铁矿晕来寻找油气的一种间接找油方法。通过详细介绍激电法寻找油气的基本原理。仪器设备等，从实践角度论述了激电法在油田勘探开发中的应用范围及其特点，最后通过兴例说明了其良好的应用效果。     

测井岩性类比解释法及应用

利用理想的地质体积模型和电阻率测井的供电电流流过模型的导电机理,推导出一种不需要含水饱和度参数即能定量计算含水饱和度的方法,即岩性类比解释法。经过初步实践,该方法应用于砂泥岩地层的测井分析,效果良好。     

利用测井资料评价储集层性质的探讨

根据对储集层之简化导电模型的理论分析,提出了一个由电阻率、孔隙度信息表示的、反映储层性质的“孔隙结构参数S”。实际应用表明,S参数在评价储集层性质、计算储层渗透率等方面具有一定的使用价值。     

接地降阻剂机理及用量研究

本文介绍我们对降阻剂降低接地电阻的机理所作的试验研究结果。这个问题目前尚有争议,有人认为存在着很大的所谓浸润层,亦有人持怀疑态度。我们的试验表明,在埋设降阻剂时确实存在着降阻剂导电溶液向土壤中渗透的一定区间。经过理论分析计算,确定了渗透层的厚度和渗透层的平均土壤电阻率。渗透层并不大,约几公分到十几公分,它可使降阻率提高约20～30％,并有良好的均压作用。仅少数的试验结果已可看出,降阻率的提高对降咀剂用量的关系具有饱和特性。     

Temperature-dependent resistivity from phonons in cuprate superconductors

The temperature dependence of the resistivity of the cuprate superconductors arising from phonon scattering is considered within standard Bloch-Gruneisen theory allowing for several different shapes of transport spectral functions _tr ² F(). In contrast to often made comments that linear resistivity is not characteristic of electron-phonon scattering, it is shown rather that it is more difficult to get muchnonlinearity from this theory except below 50–100 K, and in this low-T regime better solutions to the Boltzmann equation might be required. The reasons for the linear behavior are clarified, and the variations to be expected from possible coupling functions are explored. Possible origins of the nonlinear resistivity seen in YBa₂Cu₄O₈ and recently in YBa₂Cu₃O₇ are suggested, and effects not included specifically in these calculations are discussed. It is also pointed out that phonon contributions to the energy () dependence of quasiparticles, which is a closely related consequence of electron-phonon coupling, will differ significantly from the simple ² Fermi liquid behavior that is commonly assumed.     

Inverse resistivity problem: Geoelectric uncertainty principle and numerical reconstruction method

Mathematical model of vertical electrical sounding by using resistivity method is studied. The model leads to an inverse problem of determination of the unknown leading coefficient (conductivity) of the elliptic equation in R²$R^2$ in a slab. The direct problem is obtained in the form of mixed BVP in axisymmetric cylindrical coordinates. The additional (available measured) data is given on the upper boundary of the slab, in the form of tangential derivative. Due to ill-conditionedness of the considered inverse problem the logarithmic transformation is applied to the unknown coefficient and the inverse problem is studied as a minimization problem for the cost functional, with respect to the reflection coefficient. The Conjugate Gradient method (CGM) is applied for the numerical solution of this problem. Computational experiments were performed with noise free and random noisy data.     

测定外延层电阻率的面接触方法研究

评论了美国科学家C.C. Allen等于1966年发表的“测定外延层电阻率的点接触方法”之论文的局限性,从而提出了本方法。本方法从理论上解一维Poisson方程并与C.C。Allen法的公式相比较,获得某些公式。文中导出了面接触方法雪崩击穿电压V_(Ba)~∞(V)及点接触方法雪崩击穿电压V_(Bp)~∞(V)的比值为V_(Ba)~∞=0.456;同时还导出了点接触方法外延层耗尽层宽度为t_(min p)(μm)和面接触方法外延层耗尽层宽度t_(mina(μm)的比值为t_(minp)/t_(mina)=2.565。在实践上,为证实两种模型的功能,利用两种探针进行了对比测试。一种是通常被采用的点接触锇尖探针:另一种是利用φ0.8±0.1mm的银针,在银针顶上吸上φ0.4±0.1mm的汞球,以实现面接触。理论和实验吻合良好。     

Filtered vacuum arc deposition of transparent conducting Al-doped ZnO films

Transparent conducting ZnO:Al and ZnO films of 380-800 nm thickness were deposited on glass substrates by filtered vacuum arc deposition (FVAD), using a cylindrical Zn cathode doped with 5-6 at.% Al or a pure Zn cathode in oxygen background gas with pressure P = 0.4-0.93 Pa. The crystalline structure, composition and electrical and optical properties of the films were studied as functions of P. The films were stored under ambient air conditions and the variation of their resistance as function of storage time was monitored over a period of several months.The Al concentration in the film was found to be 0.006-0.008 at.%, i.e., a few orders of magnitude lower than that in the cathode material. However, this low Al content influenced the film resistivity, ρ, and its stability. The resistivity of as-deposited ZnO:Al films, ρ = (6-8) × 10^− 3 Ω cm, was independent of P and lower by a factor of 2 in comparison to that of the ZnO films deposited by the same FVAD system. The ρ of ZnO films 60 days after deposition increased by a factor of ∼ 7 with respect to as-deposited films. The ZnO:Al films deposited with P = 0.47-0.6 Pa were more stable, their ρ first slowly increased during the storage time (1.1-1.4 times with respect to as-deposited films), and then stabilized after 30-45 days.     

功率密度对中频磁控溅射制备的氧化锌镓薄膜性能的影响

利用中频磁控溅射方法,溅射Ga2O3含量为6.7wt%的氧化锌镓陶瓷靶材,在低温下(约40℃)制备了ZGO薄膜.考察了溅射功率密度对ZGO薄膜的晶体结构、电学和光学性能的影响.结果表明:溅射功率密度对薄膜的结构、红外反射以及导电性能有较大影响.当溅射功率密度为3.58W/cm2,氩气压力为0.8Pa时,薄膜的电阻率低达1.5×10-3Ω·cm,方块电阻为23Ω时,可见光(λ＝400nm～800nm)平均透过率高于90%.