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1.
分别利用Ga2O3粉末和Ga2O3凝胶作为Ga源,采用NH3为N源,在950℃下,分别将两种反应物与流动的NH3反应20 min合成了GaN微晶。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对微晶进行结构、形貌的分析,特别是对两种不同途径合成GaN微晶的XRD进行了分析比较。结果表明,当Ga源温度为950℃时两种不同的合成途径均可得到六方纤锌矿结构的GaN单晶颗粒,在氮化温度为850℃和900℃时,利用Ga2O3粉末作为Ga源,仅有少量的Ga2O3转变为GaN;而采用Ga2O3凝胶作为Ga源,在相同的温度下,大部分凝胶经过高温氨化反应均可转化为GaN。  相似文献   
2.
从水淬渣中回收镓的试验研究   总被引:5,自引:0,他引:5  
对鼓风炉(ISP法)或烟化炉水淬渣中回收镓的工艺进行了研究。结果表明,利用浓硫酸恒温熟化的独特浸出工艺,克服硅对液固分离的影响;以伯胺N9123作为萃取剂在硫酸介质中萃取镓;获得了含镓品位为2.82%的富集物。  相似文献   
3.
Fluorescent photon down conversion for the improvement of the blue response of ZnO/CdS/Cu(In,Ga)Se2 heterojunction solar cells and modules is investigated. Fluorescent dyes of the series Lumogen® F are analyzed by optical transmission and reflection as well as by photoluminescence measurements. A spectral transfer matrix formalism is introduced that allows to predict the suitability of a luminescent dye as a down-converter for a given solar cell from its absorption/emission properties. We find that Lumogen® F Violet 570 and Lumogen® F Yellow 083 as well as a combination of both yields improvements for Cu(In,Ga)Se2 solar modules. Particularly, we find that the short circuit current density of a Cu(In,Ga)Se2 mini-module is improved by 1.5 mA cm− 2 when applying a varnish with a combination of Lumogen® F Violet and Yellow. About 0.5 mA cm− 2 of this improvement is due to a reduced overall reflectance and an improvement of 1 mA cm− 2 results from the frequency conversion by the dyes.  相似文献   
4.
The reversible persistent changes of the fill factor (FF) induced by the illumination and voltage bias along with changes in the electronic properties of the ZnO/CdS/Cu(In,Ga)Se2 photovoltaic devices have been studied. Admittance spectroscopy and capacitance–voltage characterization reveal a correlation between the FF and the space charge distribution within the absorber. Our experiments provide evidence that a major source of FF loss in efficient devices is caused by excess negative charge close to the interface. We explain the persistent changes in the net acceptor concentration in the interface region by the relaxation effects due to compensating donors—the same mechanism, which leads to metastable changes of the doping level in the bulk of the absorber.  相似文献   
5.
This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al2O3 substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)3 was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with seed layers formed by the Ga(mDTC)3 concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 °C, and optimal distance between the reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques and simplify the growth process.  相似文献   
6.
用通用旋转组合设计的方法得到了浸钒渣在饱和碳的熔融还原过程中镓的还原提取率与温度,时间及CaO的加入量关系的非线性数学模型。用非线性优化的方法并综合考虑Fe,Mn的回收,得到了最优的工艺条件及结果;用Langmuir—Knudsen方程推算了镓在铁液中的理论挥发量与时间的关系,与由本模型得到的关系式是一致的。  相似文献   
7.
Moderate additions of Al2O3 to strontium ferrite-based mixed conductors, such as SrFe0.7Al0.3O3−δ and La0.2Sr0.8Fe0.8Ga0.2O3−δ with the composition close to the solid solution formation limits, make it possible to improve ceramics sinterability, to increase oxygen permeability and to decrease thermal expansion. These effects are associated with the segregation of alumina-rich phases, primarily SrAl2O4, and the formation of A-site cation-deficient perovskite. The improved properties of the SrFe0.7Al0.3O3-based material were used to fabricate high-quality tubular membranes for methane conversion reactors. Similar enhancement in sinterability is also observed for another promising parent material of mixed-conducting membranes, La0.5Sr0.5FeO3−δ. However, extensive dissolution of Al3+ cations in the iron sublattice, creation of A-site vacancies and changing the La:Sr concentration ratio all lead to decreasing ionic transport in La0.5Sr0.5FeO3−δ. As a result, additions of either Al2O3 or SrAl2O4 have a deteriorating influence on the oxygen permeation fluxes through La0.5Sr0.5FeO3-based ceramics.  相似文献   
8.
Co-evaporation technique from three sources was used to prepare Cu(In, Ga)Se2 polycrystalline thin films for photovoltaic conversion. Their conductivity was studied in the range 20–300 K. The grain boundary scattering mechanism is mainly responsible for the diffusion process in the latter materials. In the low temperature region, we interpret the data in terms of Mott law and the analysis is very consistent with the variable range hopping. However, thermoionic emission is predominant at high temperatures. When the conductivity deviates from the classical grain boundary conduction models, inhomogeneity is then considered and parameters such as the standard deviation and the mean potential barrier height are derived. Transmittance measurements yielded band gap values of 1.07 and 1.64 eV for CuInSe2 and CuGaSe2, respectively.  相似文献   
9.
The solvothermal reaction of mixtures of aluminum isopropoxide (AIP) and gallium acetylacetonate (Ga(acac)3) directly yielded the mixed oxides of γ-Ga2O3-Al2O3. In the solvothermal synthesis, the crystal structure of mixed oxides was controlled by the initial formation of γ-Ga2O3 nuclei. The mixed oxides prepared in diethylenetriamine have extremely high activities for selective catalytic reduction (SCR) of NO with methane as a reducing agent. With increasing crystallite size of the spinel structure, the catalytic activity increased. The ratio of the amount of methane consumed by combustion to total methane conversion was proportional to the density of acid sites on the surface of the mixed oxides. The mixed oxide catalysts prepared in diethylenetriamine had lower densities of acid sites and showed a higher methane-efficiency for CH4-SCR than those prepared in other solvents. These catalysts maintained their high activity even when the reaction was carried out under the severe conditions (i.e., high space velocity and low NO concentration).  相似文献   
10.
The Ytterbium doped gadolinium gallium garnet [Yb3+:Gd3Ga5O12, Yb:GGG] precursor powders were synthesized via homogeneous precipitation method using Yb2O3, Ga2O3, Gd2O3 and ammonium bicarbonate [NH4HCO3] as precipitator, and ammonium sulfate [(NH4)2SO4] as additive. The evolution of phase composition and micro-structure of the powders were characterized by TG- DTA, XRD, IR, and TEM. The results indicate that all precursor powders completely transform to Yb:GGG phase by calcining at 900 ℃ for 8 h, the resultant powders are well dispersed and have smaller particle size approximately 80 nm owing to the electrostatic effect.  相似文献   
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