Structural,dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–Bi(Zn0.5Ti0.5)O3 thin films prepared by sol–gel method

Lead free (1−x)(0.8Bi_0.5Na_0.5Ti_0.5O₃–0.2Bi_0.5K_0.5TiO₃)–xBiZn_0.5Ti_0.5O₃ (x=0–0.06) (BNT–BKT–BZT) thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by a sol–gel processing technique. The effects of BZT content on the structural, dielectric, ferroelectric and piezoelectric properties of the BNT–BKT–BZT thin films were investigated systematically. The BNT–BKT–BZT thin films undergo a transition from ferroelectric to relaxor phase with increasing temperature. The phase transition temperature decreases with the increase of BZT content. The BNT–BKT–BZT thin film with x=0.04 exhibits the best ferroelectric properties (P_max=40 µC/cm² and P_r=10 µC/cm²), largest dielectric constant (ε=560) and piezoelectric constant (d₃₃=40 pm/V). This finding demonstrates that the BNT–BKT–BZT thin film has an excellent potential for demanding high piezoelectric properties in lead free films.     

钛酸铋钠基无铅压电陶瓷研究近期进展

钛酸铋钠(分子式是Bi0.5Na0.5TiO3,简写为BNT)基无铅压电陶瓷性能优良,但与铅基陶瓷相比还有相当的差距,其性能有待进一步提高.从BNT基陶瓷改性、陶瓷新体系以及陶瓷制备技术等多方面,分析了提高BNT基陶瓷性能的原理、途径和方法,指出了发明陶瓷新体系的有关思路,讨论了陶瓷制备技术与陶瓷性能的关系.同时,列举了近期在BNT基陶瓷性能改善研究中的若干新进展和新结果、性能良好的BNT基陶瓷新体系及制备工艺和制备新技术对陶瓷性能的影响,并对今后的相关研究进行了展望.     

BNT铁电薄膜电容的制备及其特性研究

用脉冲激光淀积方法在p-Si基片上制备了高c轴取向的Bi4–xRxTi3O12(BNT)铁电薄膜,研究了掺钕量x对薄膜铁电性能的影响,结果表明,当x=0.80时,薄膜具有最大的剩余极化(Pr),在应用电压为10V时,Pr及Ec分别达到27×10–6C/cm2和70×103V/cm。在1MHz时,Au/BNT/p-Si(100)电容在读/写开关次数达到1010后表现出较好的抗疲劳特性。     

Strain properties of (1-x)Bi0.5Na0.4K0.1TiO3-xBi(Mg2/3Ta1/3)O3 electroceramics

A ternary solid solution of Bi_0.5Na_0.5TiO₃–Bi_0.5K_0.5TiO₃–Bi(Mg_2/3Ta_1/3)O₃ (BNKT-xBMT) lead-free electroceramics was synthesized by a solid-state reactive sintering technique. The electrostrain, dielectric, and ferroelectric properties as well as the impedance characteristics and the microstructure were systematically assessed. With the increase of BMT, the BNKT-xBMT ceramics gradually transformed from non-ergodic relaxor phase to ergodic relaxor phase, manifested as the ferroelectric-to-relaxor temperature (T_F-R) shifts towards below room temperature. Additionally, the ferroelectric hysteresis curves became pinched, and the strain curve changed from butterfly-shaped into sprout-shaped. At the ergodic relaxor composition of x = 0.04, a large electrostrain value (S = 0.4%; under an electric field of 60 kV/cm, d₃₃* = 632 pm/V) was achieved, which is mainly attributed to the electric-field-induced transition from the ergodic relaxor phase to the ferroelectric phase.     

Phase development and dielectric responses in PMN–BNT ceramics

(1 − x)Pb(Mg_1/3Nb_2/3)O₃–x(Bi_0.5Na_0.5)TiO₃ ceramics were prepared by the conventional mixed-oxide method. All compositions show complete perovskite solid solutions and the structure to change from cubic to rhombohedral at x = 0.5. The dielectric constant and dielectric loss tangent were measured as a function of both temperature and frequency. The results indicated a relaxor ferroelectric behavior for all ceramics. The temperature at maximum of the dielectric constant of PMN–BNT ceramics were seen to increase with increasing BNT content. Moreover, the broadest dielectric peak occurs at x = 0.9, which leads to a morphotropic phase boundary in this system.     

Nonstoichiometric effect of A-site complex ions on structural,dielectric, ferroelectric,and electrostrain properties of bismuth sodium titanate ceramics

To investigate the nonstoichiometric effect of (Bi_0.5Na_0.5)TiO₃ (BNT) ceramics on their properties, we propose a novel chemical expression, (Bi_0.5+xNa_0.5−3x)TiO₃. The nonstoichiometric effect of BNT can be explored in compounds with this composition without being hampered by the charge imbalance problem. With x ranging from −0.02 to 0.02, we find that the morphological, dielectric, ferroelectric, and electrostrain properties differ considerably between Na-rich and Bi-rich ceramic samples. The average grain size (AGS) increased significantly in Na-rich samples compared to that in stoichiometric BNT, while it decreased slightly in Bi-rich samples. The dielectric characteristics measured from 30 °C to 500 °C indicate that conductivity is activated in Na-rich nonstoichiometric samples but is effectively suppressed in Bi-rich nonstoichiometric samples. The ferroelectric properties also show the same trend. In Na-rich samples, elliptical polarization against electric field (P-E) hysteresis loops were detected, indicating a conductive character induced by high electric field loading. However, saturated P-E loops are observed in Bi-rich samples with well-inhibited conductivity. Furthermore, compared to stoichiometric BNT and nonstoichiometric x = 0.02 Bi-rich samples, (Bi_0.5+xNa_0.5−3x)TiO₃ samples with x = 0.01 exhibit higher electrostrain from 30 °C to 150 °C. Based on the assumption of charge balance, our findings indicated that the presence of 1 mol% excess Bi would facilitate significant improvement in the dielectric, ferroelectric, and electrostrain properties of BNT and BNT-based systems.     

BaTiO_3基无铅PTC热敏电阻材料的制备与研究

利用传统陶瓷工艺制备了掺杂(Bi0.5Na0.5)TiO3(BNT),CaCO3和Mn(NO3)2的钛酸钡基无铅PTC陶瓷材料(Bi0.5Na0.5)xBa1–xTiO3-yCaCO3-0.000 2Mn(NO3)2(x=0.005,0.020,0.040,0.080;y=0,0.02,0.04,0.06,0.08),研究了BNT和CaCO3的掺杂量对所制陶瓷微观结构和导电特性的影响。结果表明:试样的晶格常数比c/a、居里温度tC以及室温电阻率ρ25均随着BNT掺杂量的增加而增大;CaCO3的加入能有效降低样品的室温电阻率。当x=0.080,y=0.06时所制得材料的性能最好,其室温电阻率为7×102.cm,居里温度高于150℃,升阻比(ρmax/ρmin)达到103。     

掺杂BNT对SrTiO3陶瓷介电性能的影响

采用碳酸锶、氧化铋、二氧化钛、碳酸钠为原料,制备了SrTiO3系介质陶瓷。研究了BNT(钛酸铋钠)加入量对SrTiO3系陶瓷的εr、tgδ的影响,以及εr和tgδ随温度的变化。结果发现,室温下SrTiO3系陶瓷的εr随着BNT加入量的增加而逐渐提高,达到一定峰值后又逐渐下降,其最高可以达到4 300。     

机器学习中的贝叶斯网络及其推理分析

机器学习作为当今国内外研究的热点在智能系统中得到了重视和运用,贝叶斯是机器学习的核心方法之一,以贝叶斯理论作为中心的贝叶斯网络必将应用延伸到各个问题领域,本文介绍了贝叶斯网络的概念及其学习推理过程,并结合MATLAB中的BNT工具箱,引用来自UCI的标准数据集对贝叶斯网络进行仿真测试。     

BNT基无铅压电陶瓷掺杂改性的研究现状及发展趋势

综述了近几年Bi_（0.5）Na_（0.5）TiO_3（BNT）基无铅压电陶瓷体系掺杂改性方面的研究成果及发展现状。阐述了不同添加物对掺杂改性的作用机理,总结了BNT基无铅压电陶瓷制备的新工艺、新方法及其新进展,同时对BNT基无铅压电陶瓷的发展趋势做了展望。