庄河地区水资源现状浅析

本文通过对庄河地区水资源的分析及未来需水量的预测,计算其区域余水量。以确定区域经济的规划。     

垦71井区三维VSP资料波场分离方法应用研究

三维VSP资料是多偏移距VSP资料，资料中多种类型的波叠合在一起形成复杂波场。从复杂波场中分离出单一的保幅反射波波场是三维VSP波场分离的重要工作。常规二维VSP波场处理方法单一，难以适用于复杂的三维波场处理。针对三维VSP资料的波场特点，以分离上行反射P波为例，将单一波场分离方法加以适当组合，对垦71井区三维VSP实际资料进行了应用研究。结果表明，波场分离处理中叠加消去法和中值滤波相结合以及F—K滤波和中值滤波相结合的方法克服了单一方法的缺陷，波场处理后获得了波组特征明显、波场清晰单一的上行反射P波保幅波场，取得了较好的波场分离效果。     

Corrosion morphology of AZ91D exposed in an atmospheric environment

The focused ion beam technique was employed to investigate the atmospheric corrosion morphology of AZ91D. It was found that the α matrix of the alloy was preferentially corroded in the areas adjacent to intermetallic phases. The most interesting finding was that the corrosion products in corrosion cavities were pelletlike, which has never been reported before.     

Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system

Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt₃)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO₂/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO₂/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO₂ substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.     

针对不同地质目标的叠前时间偏移成像解释评价

随着计算机硬件和地震勘探成像技术的发展，叠前时间偏移正逐步替代常规的NMO加DMO加叠后时间偏移成为地震数据成像处理方法的主流。但对于不同的地质目标，叠前时间偏移的成像效果是否优于常规NMO加DMO加叠后时间偏移的成像效果呢？为此，从地震数据成像处理方法、处理流程和处理参数等方面进行了讨论，并基于某地区三维数据常规处理结果和叠前时间偏移处理结果，针对不同地质目标进行了剖析与评价。认为：叠前时间偏移成像的垂向分辨率较常规处理明显降低，但对于空间波阻抗变化明显的河流和断层，叠前时间偏移成像的空间分辨率要高于常规处理；对于小于1／4波长的叠置薄储层，叠前时间偏移成像的垂向和空间分辨率低于常规处理结果。     

Performance and Commercial Application of the Promoter LCC-A for Maximization of Propylene Yield

1 Introduction Propylene as an important feedstock for organic chemicals is mainly originated from steam cracking and catalytic cracking processes. During the FCC process the propylene content varies with the FCC catalyst and process technology adopted, resulting in significant difference in propylene concentration in the cracked product——LPG. The conventional FCC pro- cess generally gives a propylene yield of around 4%, while the FCC process with maximization of propylene yield can in…     

XMAC纵波时差高分辨率处理方法

在充分调研阵列声波测井分波提取方法的基础上，针对阿特拉斯公司的交叉多极子阵列声波测井（XMACⅡ）提供的单极波形信息，研究纵波时差提取及高分辨率处理方法。首先利用相关-互功谱法高精度地提取纵波时差，然后针对XMACⅡ仪器的接收阵列，研究组合子阵列的方法，形成共发射子阵列和共接收子阵列，最后利用子阵列对提取的纵波时差做高分辨率处理。处理现场实际测井资料，并将高分辨率处理成果与引进的eXpress软件处理成果、实测的国产高分辨率声波（纵波）测井曲线及岩心纵波时差对比分析，表明该方法提取的纵波时差曲线的纵向分辨率有很大提高，时差计算准确可靠，提取的单极纵波时差与国产高分辨率声波时差及岩心纵波时差的平均相对误差均小于7%。该方法具有较高的实用价值和广阔的应用前景。     

TUD-DNS3脱硝助剂在催化裂化装置的工业应用

TUD-DNS3脱硝助剂在中韩（武汉）石油化工有限公司1号催化裂化装置上进行了工业应用。结果表明：针对两段再生工艺，当系统中助剂占总催化剂藏量的质量分数为2.6%时，烟气脱硫装置外排污水中的氨氮质量浓度由加剂前的100 mg/L下降至40 mg/L以内；助剂的加入降低了CO焚烧炉的炉膛温度，有利于烟气的合格排放，并对装置操作、产品分布及汽油、柴油产品质量无不良影响。     

A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-quality grain structure. The dual-gate structure was employed to eliminate the grain boundaries perpendicular to the current flow in the channel. A multichannel structure was adapted in order to arrange the grain boundary to be parallel to the current flow. The proposed poly-Si TFT exhibits high-performance electrical characteristics, which are a high mobility of 504 cm/sup 2//Vsec and a low subthreshold slope of 0.337 V/dec.