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T. Choi J.‐H. Jang C.K. Ullal M.C. LeMieux V.V. Tsukruk E.L. Thomas 《Advanced functional materials》2006,16(10)
The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern. 相似文献
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Transmission performance of 10-Gb/s 1550-nm transmitters using semiconductor optical amplifiers as booster amplifiers 总被引:1,自引:0,他引:1
Yonggyoo Kim Hodeok Jang Yonghoon Kim Jeongsuk Lee Donghoon Jang Jichai Jeong 《Lightwave Technology, Journal of》2003,21(2):476-481
We have demonstrated the transmission performance of 10-Gb/s transmitters based on LiNbO/sub 3/ modulator using semiconductor optical amplifiers (SOAs) as booster amplifiers. Utilizing the negative chirp converted in SOAs and self-phase modulation induced by high optical power, we can successfully transmit 10-Gb/s optical signals over 80 km through the standard single-mode fiber with the transmitter using SOAs as booster amplifiers. SOAs can be used for booster amplifiers with a careful adjustment of the operating conditions. In order to further understand an SOA's characteristics as a booster amplifier, we model SOAs and other subsystems to verify the experimental results. Based on the good agreement between the experimental and simulation results, we can find the appropriate parameters of input signals for SOAs, such as extinction ratio, rising/falling time, and chirp parameter to maximize output dynamic range and available maximum output power (P/sub o,max/). 相似文献
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An accurate printer model that is efficient enough to be used by halftoning algorithms is proposed. The proposed signal processing model (SPM) utilizes a physical model to train adaptive linear combiners (ALCs), after which the average exposure of each subpixel for any input pattern can be calculated using the optimized weight vector. The SPM can be used to model multi-level halftoning and resolution enhancement, as well as traditional halftoning. The SPM is comprised of a single ALC layer followed by a peak-to-average ratio (PAR) correction layer, which serves to produce a PAR of less than 1.5 in the modeled exposure. The PCN (PAR correction network) employs one ALC/pixel and exploits the physics governing the characteristics of exposure in small regions. A relatively small number of training patterns suffices to train the SPM. 相似文献
5.
Dongming Peng Mi Lu 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2005,13(1):106-125
Although the notion of the parallelism in multidimensional applications has existed for a long time, it is so far unknown what the bound (if any) of inter-iteration parallelism in multirate multidimensional digital signal processing (DSP) algorithms is, and whether the maximum inter-iteration parallelism can be achieved for arbitrary multirate data flow algorithms. This paper explores the bound of inter-iteration parallelism within rate-balanced multirate multidimensional DSP algorithms and proves that this parallelism can always be achieved in hardware system given the availability of a large number of processors and the interconnections between them. 相似文献
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An experimental investigation was carried out to examine the tribological behavior of NAO (non-asbestos organic) type brake linings containing different volume ratios of graphite and antimony trisulfide (Sb2S3). A scale dynamometer was used for friction tests and particular emphases were given to the effect of applied pressure, sliding speed, and temperature on the coefficient of friction according to the relative amounts of the two solid lubricants. Results showed that the brake linings with both solid lubricants exhibited better friction stability and less speed sensitivity than the friction materials containing a single solid lubricant. In particular, the brake lining containing higher concentrations of graphite showed better fade resistance than others during high-temperature friction test. 相似文献
7.
Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs 总被引:1,自引:0,他引:1
Chung-Hsun Jang Sheu J.K. Tsai C.M. Shei S.C. Lai W.C. Chang S.J. 《Photonics Technology Letters, IEEE》2008,20(13):1142-1144
The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same. 相似文献
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本工作中我们选择了B2O3-La2O3-Y2O2-ZrO2系统作为玻璃基础组成。最后获得的LaK747/509玻璃组成中,不含有钍的成份。由于该玻璃具有一系列好的性质,如析晶范围窄、析晶速度慢以及粘度大等等,因此可以成功地在12-30L铂埚中进行熔制,并获得了尺寸为φ200×25mm的高质量玻璃。 相似文献