Non-linear current–voltage characteristics related to native defects in SrTiO3 and ZnO bicrystals

SrTiO₃ and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current–voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO₃, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current–voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current–voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current–voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.     

Valence Band Structure of ZnO (1010) Surface by Cluster Calculation

Discrete variational (DV) Xα cluster method has been employed in calculating electronic structures of ZnO. Electronic structures of the bulk and the non-polar surface model clusters are calculated with inclusion of electrostatic potentials in the bulk and near the surface, and the electronic origins of experimental spectra and chemical bonds at the surface are examined in detail. The valence band structure constructed by Zn-3d and O-2p bands is much influenced by electrostatic potentials in ZnO. It is found that the reduction of an electrostatic potential near the surface gives rise to the difference of the valence band structures between in the bulk and at the surface. The calculated density of states at the non-polar surface of ZnO, where the Zn-3d and O-2p bands are more widely separated than in the bulk, is in good agreement with the experimental UPS. In addition, a Zn-O bond at the surface is found to show stronger covalency than that in the bulk, as a result of the change of the valence band structure due to the effect of the electrostatic potential.     

Effects of welding residual stress on compressive behavior and ultimate strength of corroded plate

This study examined the effects of welding residual stress on the compressive behavior and the ultimate strength of the corroded plate. First, welding residual stress was obtained by the thermal elastic-plastic analysis. Then, the change of welding residual stress and the deflection due to the volume loss was investigated by using a newly developed program based on FEM. Finally, the effects of welding residual stress on the compressive behavior and the ultimate strength of the corroded plate were investigated by the elastic-plastic large deformation analysis. As results, the beginning point of the reduction of the initial stiffness with welding residual stress was earlier than that without welding residual stress. Such effect was observed significantly in the case that the volume was lost in the region which has compressive residual stress. Furthermore, the ultimate strength of the corroded plate was reduced by welding residual stress regardless of the plate length, the corroded regions and the reduction of the thickness. The effect of welding residual stress on the ultimate strength became small with the decrease of the thickness.     

Development of thick-foil and fine-pitch GEMs with a laser etching technique

We have produced thick-foil and fine-pitch gas electron multipliers (GEMs) using a laser etching technique. To improve production yield we have employed a new material, liquid crystal polymer, instead of polyimide as an insulator layer. The effective gain of the thick-foil GEM with a hole pitch of , a hole diameter of , and a thickness of reached a value of 10⁴ at an applied voltage of 720 V. The measured effective gain of the thick-foil and fine-pitch GEM ( pitch, diameter, and thick) was similar to that of the thick-foil GEM. The gain stability was measured for the thick-foil and fine-pitch GEM, showing no significant increase or decrease as a function of elapsed time from applying the high voltage. The gain stability over 3 h of operation was about 0.5%. Gain mapping across the GEM showed a good uniformity with a standard deviation of about 4%. The distribution of hole diameters across the GEM was homogeneous with a standard deviation of about 3%. There was no clear correlation between the gain and hole diameter maps.     

Audiologic findings in patients with a point mutation at nucleotide 3,243 of mitochondrial DNA

In preparation for the introduction of Project 2000 throughout Scotland, a need was identified to monitor the quality of the learning environment for student nurses in the practice setting. No mechanism existed to measure quality and standards, and a group was formed to devise, pilot and implement an educational audit tool which could address these requirements, since limited information was available in the literature. Using this tool, the group subsequently examined the learning opportunities available, concentrating on the physical environment, the learning climate/environment, and the students' perceptions of the learning environment within the practice setting, across hospital and community sectors, including residential accommodation and nurseries, in the wide geographical area covered by the health board. This paper describes the process by which the tool was formulated, tested and implemented, the problems encountered, and the improvements in communications between teaching and clinical staff, leading to improved opportunities for the provision of excellence in patient care.     

An anti‐windup strategy for a feedback control system based on youla parametrization

In this paper, the design strategy of anti‐windup controller (AWC) for feedback control system is proposed. The proposed method is based on Youla parametrization of linear controllers in the framework of left coprime factorization. Conventional anti‐windup controllers have difficulty in optimization of parameters. The suppression effect of windup phenomena can be adjusted easily with the proposed AWC. The effectiveness of proposed method is shown with some numerical and experimental results. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 139(4): 64–70, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10013     

Effect of Al inclusion in HfO/sub 2/ on the physical and electrical properties of the dielectrics

This authors present the effect of Al inclusion in HfO/sub 2/ on the crystallization temperature, leakage current, band gap, dielectric constant, and border traps. It has been found that the crystallization temperature is significantly increased by adding Al into the HfO/sub 2/ film. With an addition of 31.7% Al, the crystallization temperature is about 400-500/spl deg/C higher than that without Al. This additional Al also results an increase of the band gap of the dielectric from 5.8 eV for HfO/sub 2/ without Al to 6.5 eV for HfAlO with 45.5% Al and a reduced dielectric constant from 19.6 for HfO/sub 2/ without Al to 7.4 for Al/sub 2/O/sub 3/ without Hf. Considering the tradeoff among the crystallization temperature, band gap, and dielectric constant, we have concluded that the optimum Al concentration is about 30% for conventional self-aligned CMOS gate processing technology.     

Current transport in metal/hafnium oxide/silicon structure

Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the energy band diagrams and current transport mechanisms for metal/HfO₂/Si structures. In particular, we have obtained the following quantities that will be useful for modeling and simulation: i) HfO₂/Si conduction band offset (or barrier height): 1.13 ± 0.13 eV; ii) Pt/HfO₂ barrier height: ~ 2.48 eV; iii) Al/HfO₂ barrier height: ~ 1.28 eV; iv) electron effective mass in HfO₂: 0.1 m_o, where m_o is the free electron mass and v) a trap level at 1.5 ± 0.1 eV below the HfO₂ conduction band which contributes to Frenkel-Poole conduction     

A high orientation effect of cobalt-adsorbed gamma and chromium-dioxide particles for audio recording

Co-adsorbed gamma and chromium-dioxide particles were coated at magnetic fields of O, 1.0KOe, 2.5KOe to investigate magnetic and audio recording properties. We have achieved very high Rs of 91.5% and Br of 1830 gauss for Co-adsorbed gamma, and Rs of 86.3% and Br of 1700 gauss for chromium-dioxide particles coated at 2.5KOe. The increase of MOL(315Hz) was 4.4dB for Co-adsorbed gamma and 3.7dB for chromium-dioxide tape corresponding with the increase of tape Br. But the increase of bias noise level(A-weighted) was only O.6dB and O.7dB respectively.