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本文研究了FZ与CZ硅中铜与电子辐照缺陷的相互作用.实验表明,这种作用使扩铜并经电子辐照的n型FZ硅出现两个未经报道的新的深中心,E(0.043)和E(0.396).前者只存在于FZ硅而不存在于CZ硅.后者在扩铜并经电子辐照的n型FZ和CZ硅中都存在.电子辐照再加适当温度的热处理还可电激活硅中的铜,另外,铜的存在还使硅中双空位的退火温度显著地降低.种种实验表明,在硅中与铜有关的六个主要能级分别对应于六种不同结构的深中心,在这些深中心之中既包含铜又包含点缺陷.其中E(0.043)很可能是铜与间隙硅原子的络合物,而E(0.167)及H(0.411)则很可能是铜与空位的不同形态的络合物. 相似文献
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用深能级瞬态谱(DLTS)技术测量了高温退火的Be和Si共注入的LEC半绝缘GaAs(无掺杂)。在多子脉冲作用下的Al/Be-Si共注LECSIGaAs肖特基势垒中,观测到E01(0.298),E02(0.341),E03(0.555)和E04(0.821)等四个电子陷阱以及两个主要的少子(空穴)陷阱H'03(0.54)和H″03(0.57)。两少子陷阱的DLTS信号具有若干特点,比如它们的DLTS·峰难于通过增宽脉冲达到最大高度;以及峰的高度强烈地依赖于温度等。这些现象可以用少子陷阱的少子俘获和热发射理论进行合理地解释。鉴于用DLTS技术测量这种陷阱的困难,我们用恒温电容瞬态技术测定它们的空穴表观激活能分别为0.54和0.57eV。它们是新观测到的和Be-Si共注SIGaAs有关缺陷。
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本文用DLTS测量了P型硅MOS结构Si-SiO2界面的缺陷,发现了一个主界面缺陷Hit(0.503),其特点是:在测量温度范围内,它的平均空穴离化吉布斯自由能ΔGP≥0.503eV;当栅压使Si-SiO2界面处Fermi能级与硅价带顶的距离明显小于ΔGP时,它仍然具有很高的DLTS峰;随着半导体表面电位势的缩小,它的空穴表现激活能明显增大;它对空穴的俘获过程造成合脉冲宽度的多指数电容瞬态,难于用有限宽度的脉冲电压引进的空穴对其作饱和填充。上述实验结果表明:热氧化生长形成的Si-SiO2系统的能带是从共价键硅的能带连续过渡到SiO2的能带;Hit(0.503)分布在其中的过渡区中,它的能级与价带的距离随着离开硅表面越远而越大。 相似文献
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The defects at the Si/SiO2 interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO2 interface defect,Hit(0.494), results in the formation of a new interface de-fect, Au-Hit(0.445). Just like the interface defect, Hit(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO2 interface. 相似文献
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The defects at the Si/SiO2 interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO2 interface defect,Hit(0.494), results in the formation of a new interface de-fect, Au-Hit(0.445). Just like the interface defect, Hit(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO2 interface. 相似文献
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用深能级瞬态谱(DLTS)技术系统研究了Si/SiO_2界面附近的深能级和界面态。结果表明,在热氧化形成的Si/SiO_2界面及其附近经常存在一个浓度很高的深能级,它具有若干有趣的特殊性质,例如它的DLTS峰高度强烈地依赖于温度,以及当栅偏压使费密能级与界面处硅价带顶的距离明显小于深能级与价带顶的距离时,仍然可以观测到一个很强的DLTS峰。另外,用最新方法测量的Si/SiO_2界面连续态的空穴俘获截面与温度有关,而与能量位置无明显关系,DLTS测量的界面态能量分布与准静态C-V测量的结果完全不一致。本文提出的Si/SiO_2界面物理模型能合理地解释上述问题。 相似文献