激光在PERC晶硅电池中背面点接触电极制备中的应用

在经过Al2O3全钝化发射极钝化局部背接触(PERC)结构电池的背面实现良好的接触电极一直是制约着PERC高效电池向产业化推广的重要因素之一。本文采用532 nm激光烧蚀背面钝化介质层方法和传统的光刻工艺来实现背面电极的局部接触,并对两种方法进行详细的比较与分析。对激光烧蚀和激光烧结两种不同的局部接触电极制备方式进行了对比,发现激光烧蚀是更为适宜的工艺方式。相较于激光烧结,以激光烧蚀方式制备的电池的串联面接触电阻从10.7Ω.cm2降到1.24Ω.cm2,效率从4.2%提高到10.7%。     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

High performance oscillator with 2-mW output power at 300 GHz

Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF(radio frequency)output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.     

混响室内加载物损耗特性试验研究北大核心CSCD

为研究混响室加载效应,首先分析了混响室内各损耗途径,得出加载损耗是混响室测试过程中唯一人为可控的损耗路径。构建了常见的5种不同测试场景,利用时域法分别对这5种测试场景条件下的混响室品质因数进行测试并进行分析。结果表明,金属天线支架造成的加载效应最小,非金属天线支架会对混响室造成明显加载,降低混响室的品质因数,且随着非金属天线支架数量的增多,这种效应会愈发明显。此外,对加载物的平均吸收截面进行了研究,将混响室内所有加载物视为一个加载吸收截面,得到金属天线支架的吸收截面最小,非金属天线支架的加载吸收截面有明显增加。     

基于传输线原理的混响室散射场场线耦合模型

基于传输线原理,构建了均匀分布在单位球表面的入射波用于模拟混响室内"全向辐照"的电磁辐照模型,并利用Agrawal散射电压公式计算双导线传输线模型的终端负载响应电流。研究了均匀分布在球面入射波的入射方向、极化方向以及入射波数量对传输线终端响应的影响,并将数值计算结果与蒙特卡罗方法的计算结果进行对比。结果表明:分布在球面上的电磁波入射角为0~π、极化角度为0~π时,即可满足响应信号的数值完整性;入射电磁波数量达到100时,能够满足混响室内"全向辐照"的要求;理论模型计算结果与蒙特卡罗方法的计算结果吻合较好,该模型可以用于混响室内散射场场线耦合规律计算。     

异质结及其技术在新型硅基太阳能电池中的应用

文章综述了异质结及其技术在新型硅基太阳能电池中的应用.从太阳能电池特性角度,点评了其在晶体硅、非晶硅薄膜太阳能电池及新结构太阳能电池应用中的研究热点和研究现状.在此基础上,讨论了其在不断与晶体硅、薄膜硅太阳能电池融合中的发展动态.     

频率搅拌嵌套混响室场分布的统计特性

为明确频率搅拌方式下嵌套混响室内的场分布,在混响室电磁统计特性的基础上,对嵌套小室内外的场分布进行了理论研究,重点对小混响室开窗大小对场分布的影响进行了分析。当窗口为电大尺寸时,小混响室内外均服从瑞利分布;为电小尺寸时,参考车-车链路通信的统计特性,小混响室内部应满足双瑞利分布。在某大型混响室内,借助矢量网络分析仪,通过测试收、发天线间的散射参数S21,实现了样本数据的快速采集,并将样本数据与理论分布模型进行了拟合优度检验（KS检验）,检验结果证明了假设分布的正确性。     

The design and manufacture of a notch structure for a planar InP Gunn diode

A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits.We design two kinds of InP-based Gunn diodes.One has a fixed diameter of cathode area,but has variable spacing between anode and cathode;the other has fixed spacing,but a varying diameter.The threshold voltage and saturated current exhibit their strong dependences on the spacing(10 μm-20 μm) and diameter(40 μm-60 μm) of the InP Gunn diode.The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA.In this work,the diameter of the diode and the space between anode and cathode are optimized.The devices are fabricated using a wet etching technique and show excellent performances.The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.     

BaTiO3薄膜的Sol-gel法制备及对其介电特性的研究

以钛酸四丁酯和乙酸钡为主要原料,以乙二醇独甲醚为溶剂,采用溶胶凝胶法在(100)低阻硅片上制备了BaTiO-3薄膜电容,用XRD分析了该薄膜的结构,发现薄膜在硅片上取向生长,同时又对薄膜的介电性质进行研究,结果表明,薄膜的介电特性在高频范围内随频率的变化比较稳定并讨论了晶化温度对薄膜电容的影响