微光像增强器常用荧光粉性能研究

荧光粉是微光像增强器荧光屏的关键材料,可将电子图像转换为可见光学图像,其性能对像增强器的分辨力、发光光谱、调制传递函数、余辉等性能有重要影响。针对国内外目前像增强器的发展情况,就国内外像增强器荧光屏常用的P20（（Zn,Cd）S∶Ag）、P22（ZnS∶Cu,Al）、P31（ZnS∶Cu）、P43（Gd₂O₂S∶Tb）和P45（Y₂O₂S∶Tb）开展相应的性能对比研究,分别对这5种荧光粉的物相结构、光谱特性、发光效率及分辨力等性能进行了表征,分析了不同种类荧光粉的适用条件。结果表明:这5类常用荧光粉对于像增强器的不同性能提升各有贡献,其中分辨力较高的为P43荧光粉,发光效率较高的为P22荧光粉,而人眼观测舒适度最好的则为P45荧光粉。鉴于对微光像增强器高性能的要求,在选用微光像增强器用荧光粉时可选用综合性能较为优越的P22和P43荧光粉,也可根据像增强器的具体性能要求及实际使用需求选用合适的荧光粉种类。     

稀土掺杂Pb(Mg1/3Nb2/3)O3-PbTiO3压电陶瓷的烧结特性研究

在传统的固相反应制备工艺中,固相反应的烧结温度直接影响着陶瓷的物相结构、陶瓷致密度以及介电性能等.本文采用固相反应法制备x; Sm3掺杂PMN-PT压电陶瓷,通过控制不同的烧结温度,制备了一系列Sm-PMNPT陶瓷样品.利用X射线衍射仪、介电温谱以及准静态d33测量仪对陶瓷结构、介电性能、压电系数等性能进行表征.研究结果表明:烧结温度在1250℃,x=1.875mol;～2.5mol;,陶瓷样品的钙钛矿含量最大,压电系数最高可达1254 pC/N,kp=0.58,相对介电常数高达30000左右,密度达到8.48 g/cm3.     

Geometrically induced π-band splitting in graphene superlattices

According to band folding analyses, the graphene superlattices can be differed by whether the Dirac points are folded to Γ point or not. In previous studies, the inversion symmetry preserved defects open bandgap in the former superlattices while they cannot in the latter ones. In this paper, by using density functional theory with generalized gradient approximation, we have carefully studied the electronic properties of the latter graphene superlattices, in which the defects would induce π-band splitting to get the π_a1–π_a2 and π_z1–π_z2 band sets. Based on our detailed studies, such splitting could be attributed to the geometrically induced bond-symmetry breaking. In addition, these band sets could be shifted toward each other by the methodology of strain engineering. A bandgap would be opened once the band sets start to overlap. Then,its gap width could be continuously enlarged by enhancing strain until reaching the maximum value determined by the defect density. These studies contribute to the bandstructure engineering of graphene-based nanomaterials, which would be interesting to call for further investigations on both theory and experiment.