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利用自组织生长InAs/GaAs量子点的垂直相关排列机制,生长了上下两层用6.5nm GaAs间隔的InAs结构.下层InAs已经成岛,由于应力传递效应,上层InAs由二维生长向三维成岛生长的转变提前发生,临界厚度从1.7ML变成小于1.5ML.透射电子显微镜截面象显示形成上下两层高度差别很大的InAs量子点,但是由于两层量子点之间存在强烈的电子耦合,光致发光谱中只有与包含大量子点的InAs层相对应的一个发光峰. 相似文献
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海藻酸锌纤维热降解法制备氧化锌纳米结构 总被引:1,自引:0,他引:1
采用天然高分子海藻酸钠为原料, 以氯化锌水溶液为凝固浴, 通过湿法纺丝技术成功制备了海藻酸锌(Alg-Zn)纤维.通过在空气中不同温度下对所得海藻酸锌纤维进行热处理, 得到了多种ZnO纳米结构. 利用热失重分析(TG)、X射线衍射(XRD)、电子能量损失谱(EELS)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等手段对产物的组成、形貌和微观结构进行了详细表征. 结果表明, 焙烧温度和时间对所得ZnO纳米结构的尺寸和形貌具有重要影响; 800 ℃下热处理24 h以上可以得到直径约为120 nm的ZnO纳米棒. 通过仔细考察不同热处理时间得到的ZnO纳米结构, 提出了在焙烧条件下ZnO纳米棒的生长机理. 相似文献
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为了简化和改善光载无线通信系统,提出了一种光探测器偏压调制技术,利用PIN光探测器(PIN-PD)和单行载流子光探测器(UTC-PD)的输出光电流随偏压变化的特性进行调制.采用光探测器偏置调制技术,光电探测和调制可以在一个光探测器上同时实现.研究表明当入射光功率为2.93dBm时,PIN-PD在10GHz射频副载波上的调制带宽为800 MHz,UTC-PD在150GHz射频副载波上的调制带宽为18.75GHz.调制带宽随入射光功率的增大而增大,当入射光功率为12.93dBm时,UTC-PD在150GHz射频副载波上的调制带宽可达25GHz.调制深度与正弦偏压调制信号的最小值有关. 相似文献
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Optical properties of hexagonal and cubic ZnS nanoribbons are studied by using valence electron energy loss spectroscopy (VEELS) and ab initio band structure calculations. The peaks in VEELS are assigned to interband transitions by comparing the interband transition strengths with the calculated densities of states. The optical properties are deduced from the experimental VEELS, and the theoretical calculations give consistent results. This combination of experimental and theoretical approaches provides a comprehensive understanding of the optical properties of polytype ZnS. 相似文献
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In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%.On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects. 相似文献
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雌甾化合物的晶体结构已有较多的研究,本文用X射线衍射法对2-乙酰基雌酚酮(Ⅰ)和2-乙酰基雌二醇-17β-乙酸酯(Ⅱ)二化合物的晶体和分子结构进行了研究。 1 实验 1.1 晶体培养 样品(Ⅰ)和(Ⅱ)按文献所述方法合成。在室温下将(Ⅰ)的吡啶溶液置于充满甲醇蒸气的密闭容器中,使溶液保持过饱和状态而逐渐长成浅黄色的透明晶体。将(Ⅱ)溶于乙酸乙酯中,经重结晶得无色的透明晶体。 相似文献
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An integrated optoelectronic chip pair, which can transmit and receive optical signals simultaneously, is proposed in this Letter. The design and optimization of its key structure, the vertical cavity surface emitting laser's distributed Bragg reflector, are presented. Analysis is also done for its influence on the integrated chip's performance. Moreover, the chip pair's performance under dynamic conditions is analyzed. Their 3 dB modulation bandwidths are higher than 10 GHz, and their 3 dB photo-response bandwidths are around 23 GHz. Their applications will further improve the performances of the optical interconnects. 相似文献
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We have designed and fabricated zero-bias operational two-element symmetric-connected photodetector arrays(SC-PDAs).The designed SC-PDAs have higher saturation currents,larger RF power,and better frequency responses than the single photodetector(PD)under zero bias.The bias-free SC-PDA with 15μm diameter of each PD demonstrated a 3 d B bandwidth of 19.4 GHz at 0.5 m A.The RF saturation photocurrent and maximum RF output power of the SC-PDA with 40μm,50μm,and 60μm diameters under zero bias are over9.31 m A and-5.86 d Bm at 3 GHz,14.52 m A and 1.17 d Bm at 1 GHz,and 13.72 m A and-1.76 d Bm at 1 GHz,respectively. 相似文献