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微型气相色谱仪热导检测器放大电路设计 总被引:1,自引:0,他引:1
Agilent公司生产的Agilent 3000+系列色谱仪是微型气相色谱仪(micro GC)的典型代表,其热导检测器的信号放大电路和模数转换器(analog-to-digital convertor, ADC)存在功耗大、工作温度过高等不足.文中分析了micro GC电路的功能需求,从选用低噪声的24 bit Δ-Σ ADC ADS1255入手,设计了高共模电压容限、低噪声的全差分放大电路及其他外围电路,并且对全差分放大电路建立了噪声模型,计算了其噪声理论值,优化了系统设计参数.另外,还设计了一个测试平台,对所设计的全差分放大电路和ADC的性能进行了全面的测试评估,结果表明新设计的热导检测器放大电路与ADC的总噪声(以美国材料与试验协会(ASTM)标准值计)仅为1.25 μV,总功耗降低了3.7 W,满足micro GC的功能需求,而且可靠性高、体积小、结构简单,可用于新一代micro GC的研发和生产. 相似文献
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The defects at the Si/SiO2 interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO2 interface defect,Hit(0.494), results in the formation of a new interface de-fect, Au-Hit(0.445). Just like the interface defect, Hit(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO2 interface. 相似文献
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The defects at the Si/SiO2 interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO2 interface defect,Hit(0.494), results in the formation of a new interface de-fect, Au-Hit(0.445). Just like the interface defect, Hit(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO2 interface. 相似文献
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用深能级瞬态谱(DLTS)技术系统研究了Si/SiO_2界面附近的深能级和界面态。结果表明,在热氧化形成的Si/SiO_2界面及其附近经常存在一个浓度很高的深能级,它具有若干有趣的特殊性质,例如它的DLTS峰高度强烈地依赖于温度,以及当栅偏压使费密能级与界面处硅价带顶的距离明显小于深能级与价带顶的距离时,仍然可以观测到一个很强的DLTS峰。另外,用最新方法测量的Si/SiO_2界面连续态的空穴俘获截面与温度有关,而与能量位置无明显关系,DLTS测量的界面态能量分布与准静态C-V测量的结果完全不一致。本文提出的Si/SiO_2界面物理模型能合理地解释上述问题。 相似文献
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In this Letter, the effects of material/structure parameters of photonic crystal(Ph C) parallel waveguides on the coupling length are investigated. The results show that, increasing the effective relative permittivity of the Ph C leads to a downward shift of the photonic bandgap and a variation of the coupling length. A compact Ph C 1.31/1.55 μm wavelength division multiplexer(WDM)/demultiplexer with simple structure is proposed,where the output power ratios are more than 24 d B. This WDM can multiplex/demultiplex other light waves efficiently. 相似文献