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The electronic packaging shell with high silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the Si C particulate was analyzed. The microstructures of different parts of the shell were observed by scanning electron microscopy and optical microscopy, and the thermophysical and mechanical properties of the shell were tested. The results show that there exists the segregation phenomenon between the Si C particulate and the liquid phase during thixoforming, the liquid phase flows from the shell, and the Si C particles accumulate at the bottom of the shell. The volume fraction of Si C decreases gradually from the bottom to the walls. Accordingly, the thermal conductivities of bottom center and walls are 178 and 164 W·m-1·K-1, the coefficients of thermal expansion(CTE) are 8.2×10-6 and 12.6×10-6 K-1, respectively. The flexural strength decreases slightly from 437 to 347 MPa. The microstructures and properties of the shell show gradient distribution. 相似文献
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液固分离法近净成形SiC_p/Al电子封装壳体的组织和性能(英文) 总被引:2,自引:0,他引:2
采用液固分离工艺制备高SiC体积分数Al基电子封装壳体(54%SiC,体积分数),借助光学显微镜和扫描电镜分析壳体复合材料中SiC的形态分布及其断口形貌,并测定其物理性能和力学性能。结果表明:SiCp/Al壳体复合材料中Al基体相互连接构成网状,SiC颗粒均匀镶嵌分布于Al基体中。复合材料的密度为2.93 g/cm3,致密度为98.7%,热导率为175 W/(m·K),热膨胀系数为10.3×10-6K-1(25~400°C),抗压强度为496 MPa,抗弯强度为404.5 MPa。复合材料的主要断裂方式为SiC颗粒的脆性断裂同时伴随着Al基体的韧性断裂,其热导率高于Si/Al合金的,热膨胀系数与芯片材料的相匹配。 相似文献
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采用高能离子注渗技术,首先在低碳钢表层注入W,然后再用渗碳的方法原位合成纳米级碳化钨(WC),其注渗层厚度达到1.0mm.低碳钢表层的显微硬度得到显著提高,从表层到心部硬度逐渐降低,呈梯度分布.通过扫描电镜、能谱分析、X射线衍射等分析手段证明了WC的存在.WC颗粒呈针状、板条状和块状弥散分布在低碳钢基体表层中,其尺寸在30~200nm之间.细小的WC颗粒与基体结合良好,有效地阻止了位错的运动和微裂纹的扩张,从而有效地提高了低碳钢基体的硬度. 相似文献
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作者设计了一种朴缩铸件新型冒口—半保温球形冒口,并从理论和实践上进行了阐述和研究,最后指出了它的优点和应用前景。 相似文献
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