三氯乙酸终止液对木瓜蛋白酶酶活测定的影响研究

本实验研究了不同的三氯乙酸终止液,对木瓜蛋白酶酶活的影响。通过使用两种检测方法,不同配方的三氯乙酸终止液进行实验。结果表明,使用两种不同配方的三氯乙酸终止液所得的结果相差2倍多。用不同稀释浓度的三氯乙酸终止液,在高浓度时,不同浓度的三氯乙酸终止液得到的结果差别很大,随着三氯乙酸浓度的降低,所测得的酶活不断升高;但是在低浓度时,不同浓度的三氯乙酸终止液得到的结果差别不大。     

卷取机前夹送辊不同驱动方式的夹送力对比分析

文章针对有色金属加工生产机组中卷取机前夹送辊驱动方式的不同,对夹送辊的结构和驱动力矩做对比分析,同时进行理论设计计算,供设计参考使用。     

基于亚龙YL-236的32×16 LED点阵显示屏的设计

文章介绍了基于亚龙YL-236实验台的32×16点阵显示屏的硬件电路设计、电路驱动、软件设计,实现滚动显示16×16的汉字、8×16的数字、字母。具有结构简单,可控性好,方便实现的优点,具有一定的实际价值。     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

亲子乐园空调送风方式的数值模拟研究

大型综合室内亲子乐园属于高大空间,设有游乐设施和游戏的特殊性使得对空间的舒适性要求一致,但是送风气流遇阻严重,室内存在较多气流死角,影响室内空气质量和儿童健康。因此其空调设计不仅需要考虑温度、风速的空间均匀度,还要考虑各点的空气龄和PMV-PPD指标。以天津某亲子乐园为研究对象,利用scSTREAM软件对适用于该房间的辐射供冷加新风、置换通风、混合通风三种空调方式的送风效果进行数值模拟分析,从流场的均匀性、人员的热舒适性等方面对模拟结果进行探讨,研究结果表明辐射供冷加新风方式的空间均匀性和PMV指标最佳,混合通风方式的空气龄最小。     

Effects of different carbon sources and C/N values on nonvolatile taste components of Pleurotus eryngii

Pleurotus eryngii, the second largest industrial cultivation mushroom in China, is usually cultivated on substrates mainly consisting of sawdust and corncob. In this study, experiments were performed to determine the effects of different carbon sources and C/N values on nonvolatile taste components of P. eryngii. The effects of different carbon sources on nonvolatile taste components levels revealed that sawdust was beneficial to high levels of crude protein, amino acids, 5′‐nucleotides and equivalent umami concentration, while corncob was beneficial to high contents of carbohydrate, polysaccharides and trehalose. At the similar C/N values, relatively higher sawdust content was beneficial to umami amino acid production, while relatively higher corncob content was beneficial to high contents of carbohydrate, polysaccharides and mannitol. Higher C/N value was beneficial to high levels of crude protein, amino acids, 5′‐nucleotides and equivalent umami concentration, while lower C/N value was beneficial to high contents of carbohydrate, polysaccharides and trehalose. These results provided information for P. eryngii fruit body industrial cultivation to obtain specific nonvolatile taste components with high levels.     

新型钢丝圈清洁器的使用效果

为了解决钢丝圈挂花问题,阐述了LH001新型钢丝圈清洁器的特点和应用效果;通过试验说明使用新型钢丝圈清洁器断头率低,基本无挂花,纺纱效果好。指出:新型钢丝圈清洁器是普通钢丝圈清洁器的更新换代产品,值得推广。     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.