On the problem of hydrogen removal during heat treatment of large forgings

The solutions to a differential equation for the problem of heating of a cylinder in a medium with a fixed temperature are used to obtain equations for estimating the change in the hydrogen concentration in forgings from data on the hydrogen concentration at the cylinder axis or on the average bulk hydrogen concentration. Similar equations are also obtained for forgings having square cross sections. The calculation demonstrates that, for the case of a twofold decrease in the hydrogen concentration in a forging, the calculated times of annealing of a cylindrical forging differ by three times.     

Volumetric out-of-furnace heat treatment of 3600-M3 decomposers

Specifications require that all the welds in 12-m-diam. decomposers with a capacity of 3600 m³ be subjected to high-temperature tempering before going into service in order to alleviate the stresses from the welding operation. Specialists at the organizations VNIIPTkhimnefteapparatury and VNIImontazhspetsstroi have proposed out-of-furnace volumetric (complete) of the assembled decomposer with the use of special heaters. The use of this heating method has shortened assembly operations while providing the welds with a highquality heat treatment and reducing the stresses overall (including welding stresses, stresses from assembly of the decomposer, etc.) The technology ensures uniform heating of the housing of the decomposer and provides for close control over the process. The experience gained in heat-treating decomposers can also be used in the construction of other containers that come into contact with corrosive media. __________ Translated from Metallurg, No. 3, pp. 61–64, March, 2006.     

The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/δ(Si)-GaAs structures

The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E _g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E _g (including the case of CO₂ laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T _c = 45 K); at higher temperatures, the effect disappears.     

Studies on high density polyethylene (HDPE) functionalized by ultraviolet irradiation and its application

The structure and properties of high density polyethylene (HDPE) functionalized by ultraviolet irradiation at different light intensities in air were studied by electron analysis, FTIR spectroscopy, contact angle with water, differential scanning calorimetry and mechanical properties measurement. The results show that oxygen‐containing groups such as C?O, C—O and C(?O)O were introduced onto the molecular chain of HDPE following irradiation, and the rate and efficiency of HDPE functionalization increased with enhancement of irradiation intensity. After irradiation, the melting temperature, contact angle with water and notched impact strength of HDPE decreased, the degree of crystallinity increased, and their variation amplitude increased with irradiation intensity. Compared with HDPE, the yield strength of HDPE irradiated at lower light intensity (32 W m^?2 and 45 W m^?2) increases monotonically with irradiation time, and the yield strength of HDPE irradiated at higher light intensity (78 W m^?2) increases up to 48 h and then decreased with further increase in irradiation time. The irradiated HDPE behaved as a compatibilizer in HDPE/polycarbonate (PC) blends, and the interface bonding between HDPE and PC was ameliorated. After adding 20 wt% HDPE irradiated at 78 W m^?2 irradiation intensity for 24 h to HDPE/PC blends, the tensile yield strength and notched Izod impact strength of the blend were increased from 26.3 MPa and 51 J m^?1 to 30.2 MPa and 158 J m^?1, respectively. Copyright © 2003 Society of Chemical Industry     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

应用数字PWM器件SA4828的大功率直流电源

本文介绍一种智能型、高精度PWR控制器SA4828，其控制实行全数字化产生三相脉宽调制波形．本文采用此器件设计大功率直流电源应用于22KW直流电机测试，对感性负载表现出具有纹波小，响应迅速、硬件电路简洁、控制简单易于编写的优点。     

SCB火工品的研究与发展

文章评述了半导体桥火工品问世以来的研究成果与发展趋势。主要内容有半导体桥作用机理、半导体桥的结构与封装、半导体桥火工品的特点、半导体桥火工品的应用、半导体桥火工品的研究和发展趋势。     

Photosensitivity of surface barrier structures based on Cu(In,Ga)Se<Subscript>2</Subscript> films grown by codeposition in vacuum

Polycrystalline Cu(In,Ga)Se₂ (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se₂ type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can be used for optimization of the CIGS film technology.     

布帮鞋无浆贴合工艺技术

本工艺是对原有工艺的改进，突破了原有布帮鞋不能采用无浆贴合的局限性，对原有工艺中的不足有了很大的改进，提高了生产效率，改善了鞋子外观质量，增加了鞋子的美观性。     

NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。