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1.
Rheological properties of MR fluids under large step strain shear are presented in this paper. The experiments were carried out using a rheometer with parallel-plate geometry. Under the large step strain shear, MR fluids behave as nonlinear viscoelastic properties, where the stress relaxation modulus, G(tγ), shows a decreasing trend with step strain. The experimental results indicate that G(tγ) obeys time-strain separability. Thus, a mathematical form based on finite exponential serials is proposed to predict MR behavior. In this model, G(tγ) is represented as the product of a linear stress relaxation, G(t), and the damping function, h(γ), i.e. G(tγ)=G(t) h(γ). G(t) is simply represented as a three-parameter exponential serial and h(γ) has a sigmoidal form with two parameters. The parameters are identified by adopting an efficient optimization method proposed by Stango et al. The comparison between the experimental results and the model-predicted values indicates that this mathematical model can accurately predict MR behavior.  相似文献   
2.
西气东输放空系统的设计与研究   总被引:1,自引:0,他引:1  
论述了石油天然气行业中的放空系统工作原理,研究了西气东输采用的放空点火系统特点,讨论了放空立管的计算模型,提出了比较符合实际情况的计算模型,指出在桅杆结构的计算分析中,应该考虑钢丝绳的弹性支撑作用。钢丝绳的弹性支撑作用对结构的周期计算、风荷载导算、地震作用的计算都有较大的影响。  相似文献   
3.
番禺30-1砂岩强水驱气藏储层非均质性研究   总被引:7,自引:5,他引:2  
针对垂向非均质性严重且边底水能量强的番禺30-1气田面临的潜在开发问题,通过岩心分析及测井二次解释,对其夹层特征及储层非均质性等进行了研究,划分出19个流动单元并定量描述了各流动单元的特征参数,建立了该气田的精细地质模型。综合评价表明,新建的地质模型具有较高的精度,为该气藏合理开发提供了坚实的地质基础。  相似文献   
4.
5.
文章详细介绍了基于USB总线的虚拟频谱分析仪的设计过程。该仪器使用嵌入式混合处理器MC56F8323来实现动态信号的实时采集、频谱分析和数字滤波等功能。处理结果由USB2.0接口芯片CY7C68013上传至PC机.以完成数据显示、存储、绘制图形等功能。其中,CY7C68013工作于Slave FIFO模式,以实现与MC56F8323间的数据传输。该系统可同时对两路动态信号进行实时谱分析,每路采样频率高选500kHz。  相似文献   
6.
Commercial purity aluminum (99.5%) was fabricated by equal channel angular pressing (ECAP) up to total accumulated strains of approx. 10. The annealing behavior of material deformed to total strains of approx. 1 and 10 was investigated, using heat treatments of 2 h at various temperatures from 100 to 500 °C. The microstructure of the annealed materials was characterized using the electron back-scatter pattern technique. A number of parameters were determined including the distribution and average values of both the boundary spacings and misorientations. For samples deformed to a total strain of 1, annealing resulted in discontinuous recrystallization. For samples deformed to a total strain of 10, annealing resulted in microstructures exhibiting characteristics of both uniform coarsening and, in a number of places, of discontinuous recrystallization. An attempt was made, based on the boundary spacing distributions, to separate these two components. The grain size after annealing was still however small, being just 6.4 μm after 2 h at 300 °C.  相似文献   
7.
安全加密产品的领导者SafeNet 公司,近日发布了新一代世界级高安全加密锁产品——圣天狗,以确保软件开发商的知识产权不被非法盗用。圣天狗(Sentinel Dog)是第一个也是唯一一个在市场上采用公钥技术、AES加密和内部验证机制的保护锁。它在提供超强安全加密性能的同时具有弹性化的授权模式。  相似文献   
8.
A simple template‐free high‐temperature evaporation method was developed for the growth of crystalline Si microtubes for the first time. As‐grown Si microtubes were characterized using X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and room‐temperature photoluminescence. The lengths of the Si tubes can reach several hundreds of micrometers; some of them have lengths on the order of millimeters. Each tube has a uniform outer diameter along its entire length, and the typical outer diameter is ≈ 2–3 μm. Most of the tubes have a wall thickness of ≈ 400–500 nm, though a considerable number of them exhibit a very thin wall thickness of ≈ 50 nm. Room‐temperature photoluminescence measurement shows the as‐synthesized Si microtubes have two strong emission peaks centered at ≈ 589 nm and ≈ 617 nm and a weak emission peak centered at ≈ 455 nm. A possible mechanism for the formation of these Si tubes is proposed. We believe that the present discovery of the crystalline Si microtubes will promote further experimental studies on their physical properties and smart applications.  相似文献   
9.
In this paper, the moving least-squares differential quadrature (MLSDQ) method is employed for free vibration of thick antisymmetric laminates based on the first-order shear deformation theory. The generalized displacements of the laminates are independently approximated with the centered moving least-squares (MLS) technique within each domain of influence. The MLS nodal shape functions and their partial derivatives are computed quickly through back-substitutions after only one LU decomposition. Subsequently, the weighting coefficients in the MLSDQ discretization are determined with the nodal partial derivatives of the MLS shape functions. The MLSDQ method combines the merits of both the differential quadrature and meshless methods which can be conveniently applied to complex domains and irregular discretizations without loss of implementation efficiency and numerical accuracy. The natural frequencies of the laminates with various edge conditions, ply angles, and shapes are calculated and compared with the existing solutions to study the numerical accuracy and stability of the MLSDQ method. Effects of support size, order of completeness of basis functions, and node irregularity on the numerical accuracy are investigated in detail.  相似文献   
10.
For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.  相似文献   
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