Effects of Substrate Temperatures on the Structure and UV-shielding Properties of TiO_2-CeO_2 Films Deposited on Glass by Radio-frequency Magnetron Sputtering

1Introduction Theultravioletrays(UV)insunlight(-4%)cantransmitintoroomthroughcommonfloatglass,theUVcanmakethematerialsintheroom,eg,paper,furni ture,textilefabricandplastics,becoloredanddeterio rated.ShieldingfromUVirradiationisofinterestinmanyfields.Formu…     

Improved visible transparency of SIO<Subscript>2</Subscript>/ZNO:AL /CEO<Subscript>2</Subscript>-TIO<Subscript>2</Subscript>/SIO<Subscript>2</Subscript> multilayer films with high UV absorption and infrared reflection rate

New visible transparent, UV absorption, and high infrared reflection properties have been realized by depositing multilayer SiO₂/ZnO: Al/CeO₂-TiO₂/SiO₂ films onto glass substrates at low temperature by radio frequency magnetron sputtering. Optimum thickness of SiO₂, ZnO: Al (ZAO) and CeO₂-TiO₂ (CTO) films were designed with the aid of thin film design software. The degree of antireflection can be controlled by adjusting the thickness and refractive index. The outer SiO₂ film can diminish the interference coloring and increase the transparency; the inner SiO₂ film improves the adhesion of the coating on the glass substrate and prevents Ca²⁺, Na⁺ in the glass substrate from entering the ZAO film. The average transmittance in the visible light range increases by nearly 18%-20%, as compared to double layer ZAO/CTO films. And the films display high infrared reflection rate of above 75% in the wavelength range of 10-25 μm and good UV absorption (> 98%) properties. These systems are easy to produce on a large scale at low cost and exhibit high mechanical and chemical durability. The triple functional films with high UV absorption, antireflective and high infrared reflection rate will adapt to application in flat panel display and architectural coating glass, automotive glass, with diminishing light pollution as well as decreasing eye fatigue and increasing comfort.     

Effect of heat-treatment on crystalline phase and UV absorption of 60CeO2-40TiO2 thin films by magnetron sputtering

60CeO2-40TiO2 thin films were deposited on soda-lime silicate glass substrates by R.F. magnetron sputtering. The effects of heat-treatment on the UV-absorption of the thin films were studied on the 60CeO2-40TiO2 thin film with the largest UV cut-off wavelength. The sample films with CeO2:TiO2=60:40 were heated at 773 K, 873 K, 973 K for 30 min. These films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy and spectrometer (XPS). XRD analysis proves that the addition of TiO2 to CeO2 changed the crystalline state of CeO2. But the UV absorption effect of CeO2-TiO2 films with CeO2 crystallite phase is inferior to that of the amorphous phase CeO2-TiO2 films. XPS analysis also indicates that the amorphous phase CeO2-TiO2 films have the most Ce3+ content in these films. Amorphous phase and crystalline phase of the CeO2-TiO2 films have different effects on UV absorption of the thin films.     

CO2吞吐技术在深层稠油开发中的应用

吐哈油田深层稠油和三塘湖盆地浅层稠油探明储量9814×10^4t,利用三次采油技术开发对吐哈油田储量接替和原油上产具有战略性意义。由于原油黏度高,在井底附近及其井筒内的流动性较差,在不采取额外措施的情况下无法进行正常、稳定生产。同时,边远难采区块的勘探试油,需要采取新的工艺才能获取试采数据,落实油藏储量,提高对油藏的进一步认识。通过调研认为：在稠油油藏开发过程中,利用CO2实施早期吞吐,具有很大的上产潜力和经济效益。     

Transparent and high infrared reflection film having sandwich structure of SiO2/Al:ZnO/SiO2

New transparent and high infrared reflection films having the sandwich structure of SiO₂/Al:ZnO(AZO)/SiO₂ were deposited on the soda-lime silicate glass at room temperature by radio frequency (R.F.) magnetron sputtering. The optical and electrical properties of SiO₂ (110 nm)/AZO (860 nm)/SiO₂ (110 nm) sandwich films were compared with those of single layer AZO (860 nm) films and double layer SiO₂ (110 nm)/AZO (860 nm) films. The results show that these sandwich films exhibit high transmittance of over 85% in the visible light range (380–760 nm), and low reflection rate of below 4.5% in the wavelength range of 350–525 nm, which is not shown in the conventional single layer AZO (860 nm) films and double layer SiO₂ (110 nm)/AZO (860 nm) films. Further these sandwich films display a low sheet resistance of 20 Ω/sq by sheet resistance formula and high infrared reflection rate of above 80% in the wavelength range of 15–25 μm. In addition, the infrared reflection property of these sandwich films is determined mainly by the AZO film. The outer SiO₂ film can diminish the interference coloring and increase transparency; the inner SiO₂ film improves the adhesion of the coating to the glass substrate and prevents Ca²⁺ and Na⁺ in the glass substrate from entering the AZO film.     

射频磁控溅射法在玻璃上制备紫外吸收和透明导电双功能薄膜

制备了SnO2:Sb(6%,摩尔分数)靶材和一系列不同摩尔比的CeO2-TiO2靶材;以所制靶材用射频磁控溅射法在普通玻璃基片上沉积了CeO2-TiO2单层和CeO2-TiO2/SnO2:Sb双层薄膜.用紫外-可见光谱、Raman光谱、X射线光电子能谱和X射线衍射对CeO2-TiO2薄膜进行了表征.结果表明:在CeO2/TiO2摩尔比为0.5:0.5和0.6:0.4时沉积得到的CeO2-TiO2薄膜为非晶态结构,并具有高的紫外吸收(平均值＞99%)和高的可见光透过率(平均值＞80%).在CeO2-TiO2薄膜表面存在Ce4 ,Ce3 和Ti4 .对CeO2-TiO2/SnO2:Sb双层薄膜,除具有高的紫外吸收(平均值＞99%)和可见光透过率(平均值＞75%)性能外,还具有导电性,方块电阻在80～90 Ω/口之间,电阻率在(3.2～3.6)×10-3Ω·cm之间.该双层镀膜玻璃具有截止紫外线和透明导电双功能.     

Preparation and Characterization of CeO2-TiO2/SnO2：Sb Films Deposited on Glass Substrates by R.F. Sputtering

CeO2-TiO2 films and CeO2-TiO2/SnO2:Sb(6 mol%)double films were deposited on glass substrates by radio-frequency magnetron sputtering(R.F.Sputtering),using SnO2:Sb(6 mol%)target,and CeO2-TiO2 targets with different molar ratio of CeO2 to TiO2 (CeO2:TiO2=0:1.0;0.1:0.9;0.2:0.8;0.3:0.7;0.4:0.6;0.5:0.5;0.6:0.4; 0.7:0.3; 0.8:0.2;0.9:0.1;1.0:0).The films are characterized by UV-visible transmission and infrared reflection spectra,scanning electron microscopy(SEM),Raman spectroscopy,X-ray photoelectron spectroscopy(XPS)and X-ray diffraction(XRD),respectively.The obtained results show that the amorphous phases composed of CeO2-TiO2 play an important role in absorbing UV, there are Ce3+,Ce4+ and Ti4+ on the surface of the films;the glass substrates coated with CeO2-TiO2(Ce/Ti=0.5:0.5;0.6:0.4)/SnO2:Sb(6 mol%) double films show high absorbing UV(>99),high visible light transmission(75%)and good infrared reflection films can be used as window glass of buildings,automobile and so on.     

Preparation and characterization of transparent conductive zinc doped tin oxide thin films prepared by radio-frequency magnetron sputtering

High transparent and conductive thin films of zinc doped tin oxide (ZTO) were deposited on quartz substrates by the radio-frequency (RF) magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction (XRD) results show that ZTO films possess tetragonal rutile structure with the preferred orientation of (101).The surface morphology and roughness of the films was investigated by the atomic force microscope (AFM).The electrical characteristic (including carrier concentration,Hall mobility and resistivity) and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2(V ·sec)-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.     

交流特高压线路高抗补偿度上限

为避免因高抗补偿度过高而产生的非全相运行谐振过电压,分析了单、双回特高压线路非全相运行谐振过电压的产生机理,给出了从避免产生谐振过电压角度确定高抗补偿度上限的方法。结果表明,线路参数对高抗补偿度上限的影响很小,且单、双回线路的高抗补偿度上限非常接近。在目前线路设计水平和设备制造水平下,在系统频率不低于48Hz的条件下,当高抗补偿度设计值不超过90%时,可确保不产生具有危险性的高幅值非全相运行谐振过电压,故一般可将90%作为高抗补偿度的设计上限;而当高抗补偿度小于85%时,肯定不会发生谐振。作为研究的基础,深入分析了高抗中性点接地电抗的阻抗值偏差、系统频率偏差以及高抗补偿容量偏差对产生非全相运行谐振的条件的影响。