High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

新型实用布线算法──L─M算法

本文提出新型布线算法，集李氏迷宫法与线搜索法的长处为一体，以饱和带法进行动态排序，以线搜索法确定借孔位置，然后用李氏法进行单层布线，获得最佳路径，从而达到线型好，布通率高的效果。     

Modeling electromigration lifetime under bidirectional currentstress

Electromigration reliability of interconnect under bidirectional current stress has been studied in a wide frequency range (mHz to 200 MHz). Experimental results show that the AC lifetime rises with the stress current frequency. The current density exponent and the activation energy of AC lifetime are found to be twice that of DC lifetime. Pure AC current stress failure at extremely high current density is believed to result from thermal migration of metal at hot/cold transition points     

Depth of intergranular oxygen diffusion during environment-dependent fatigue crack growth in alloy 718

The elevated-temperture fatigue crack growth behavior in alloy 718, when subjected to a loading frequency lower than the transitional frequency of this alloy, is viewed as fully environment dependent. In this process, the crack growth increment per loading cycle is assumed to be equal to the intergranular oxygen diffusion depth at the crack tip during the cycle effective oxidation time. In order to identify the trend of this diffusion depth an experimental program was carried out on compact tension specimens made of alloy 718 at 650 °C in which fatigue crack growth measurements were made for cyclic load conditions with and without hold time periods at minimum load level. This work resulted in establishing a relationship correlating the intergranular oxygen diffusion depth and the value of the stress intensity factor range ΔK. This relationship, when integrated over the cycle effective oxidation time, results in a closed-form solution describing the environment-dependent fatigue crack growth rate. A comparison is made between the results of this solution when applied to different loading frequencies and the corresponding experimental results. This comparison shows good agreement between the two sets of results. Furthermore, by combining the parabolic rate law of diffusion and the equation for the intergranular oxygen diffusion depth, an explicit expression for the oxygen diffusivity of grain boundaries is derived. It is found that this diffusivity is both a ΔK- and a frequency-dependent parameter.     

Photoreactivation of Escherichia coli following medium-pressure ultraviolet disinfection and its control using chloramination.

Ultraviolet (UV) disinfection is becoming increasingly popular as an alternative disinfection technology to chlorination in recent years. In this study, we investigated the photoreactivation of Escherichia coli following medium-pressure (MP) UV disinfection of synthetic water by a bench-scale collimated beam apparatus. The UV doses ranged from 1.6 -19.7 mWs/cm2 and photoreactivation was investigated for 6 hours under fluorescent light. In addition, chloramination was applied after UV disinfection to investigate its ability to control photoreactivation. It was found that photoreactivation occurred for all UV doses tested and the increase in bacteria numbers ranged from 0.04 to 1.35 log10. However, the degree of photoreactivation decreased with increased UV doses. Chloramination experiments revealed that the addition of 0.5 mg/l of monochloramine resulted in suppression of photoreactivation for 1 hour only. An increased monochloramine dose of 1 mg/l was found to prevent photoreactivation for the entire duration of the experiment. The results of this study have shown that photoreactivation occurs even after MP UV disinfection, although it is of a lesser extent at higher UV doses. This study has also established that secondary chloramination can effectively suppress and eliminate photoreactivation with a chloramine dose of 1 mg/l.     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested