10 Gbit/s optical soliton transmission over 7200 km by using amonolithically integrated MQW-DFB-LD/MQW-EA modulator light source

The authors demonstrate 10 Gbit/s optical soliton transmission in a recirculating loop through the use of a monolithically integrated MQW-DFB-LD/MQW-EA modulator light source. The timing jitter due to the Gordon-Haus effect is successfully reduced by the optical bandpass filters conventionally used in the cascaded EDFAs to avoid the accumulation of amplified spontaneous emission. The transmission distance of 7200 km is achieved at a bit error rate of 10^-9     

Preparation of polyimide-epoxy composites

The formation of a three dimensional network of crosslinked epoxy leads all unmodified epoxies to have inherent brittleness and relatively low degradation temperatures. Polyimides, on the other hand, are widely used for applications that require high degrees of flexibility and thermal resistance. Here, we have focused on the preparation of epoxy systems cured with polyamic acids instead of traditional amino-group-containing hardening agents. The cure behavior and potential reaction mechanisms of EPON 828 resin and polyamic acid mixtures were evaluated by DSC and TGA. Thermal analysis showed a complex reaction sequence taking place in the mixture and also determined the extent of reaction of the polyamic acid with itself and the competitive reaction of the polyamic acid with the epoxy. The compositions of the mixtures were varied to see the dependence of the cure behavior on component concentrations. Solutions of the two components did not phase separate and also phase separation was not apparent either optically or microscopically in the cured samples. This phase behavior was attributed to a unique in situ reaction. A novel solvent system for the polyamic acid precursor was also used.     

Cooling condition dependence on ion etching rate in a softmagnetic metallic glass

Taking into consideration the knock-on cascade mechanism and the free volume theory, the cooling condition dependentR _s (ion etching rate) is investigated for a liquid-quenched Fe-10at%Si-15at%B alloy glass. A highR _s is found in a slow cooled glass.     

Latest advances in camcorder technology

Camcorders have been developed to be compact with high performance. Latest advancement of key technologies and devices such as digital signal processing LSI, six-layer printed circuit board with micro chips, high-speed power lens with linear motor, 103 K pixels 0.7-in LCD electronic viewfinder, and high-energy Li-ion battery are described. High-band format is also explained     

A high resolution negative working resist,LMR-UV,for g- and i-line lithography

LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm^?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.     

Properties of Va metal-B films prepared by r.f.-sputtering

Ta_100-x B _x alloy films were prepared by r.f.-sputtering in the chemical composition range 45 x 77. Ta_100-x B _x (45 x 58) films consist of the amorphous phase, while the TaB₂ crystal phase was observed in Ta_100-x B _x (66 x 77) films. A remarkable preferred orientation with the (001) plane of TaB₂ parallel to the film surface was observed in Ta₃₄B₆₆. The d.c. electrical conductivity of Ta_100-x B _x (45 x 77) films decreases with increasing boron content in the range 6.7 × 10³ to 1.3 × 10^3–1 cm^–1. The micro-Vickers hardness of Ta_100-x B _x (45 x 77) films was in the range 2200 to 2600 kg mm^–2.     

Preparation of Co-N films by rf-sputtering

Co-N films in the wide compositional range can be prepared by reactive sputtering. Co-N sputtered films consist of one or two phases, such as CoN, Co₂N, Co₃N, Co₄N and -Co. Co₄N phase with a cubic unit cell is observed, and its lattice constant isa = 0.3586 nm. The preferred orientation is observed on the Co-N films, CoN (200) plane, Co₄N (1 1 1) plane and -Co (002) plane parallel to the film surface, respectively. Saturation magnetization _s of Co-N sputtered film decreases from 160 to 1.7 e.m.u. g^–1 with increasing content of N from 0 to 21.7 at%, and coercive force_I H _c is the range of 43 to 5000e at room temperature.     

Junction properties of polypyrrole containing a small amount of poly(ethylene oxide) with indium

A method to generate a porous region near the surface of a polymer is suggested. In this method the region near the surface is swollen by immersing the polymer for a short time in a solvent. Subsequently, the polymer is introduced in a nonsolvent (for the polymer) that is, however, miscible with the solvent. The formation of the porous region is a result of (1) the swelling accompanied by the disentanglement of the surface molecular chains, and the dissolution of some of them during the immersion in the solvent, and (2) the rapid extraction of the solvent from the swollen region by the nonsolvent. The porous surface provides a matrix into which a second incompatible monomer can be polymerized so that the two otherwise incompatible polymers can adhere to one another.