Neural mechanism of pupillary dilation elicited by electro-acupuncture stimulation in anesthetized rats

The neural mechanisms to reflex dilation elicited by electro-acupuncture stimulation were investigated in anesthetized rats. Two needles, with 160 microns diameter and about 5 mm apart, were inserted into the skin and underlying muscle of a hindpaw. Repetitive 20 Hz, 0.5 ms electrical pulses at various intensities were used for stimulation for 30s. The pupil size was magnified about 44 times via a microscope and was continuously recorded on a videotape. Electro-acupuncture stimulation at more than 0.5 up to 6 mA induced stimulus intensity-dependent pupil dilation. These responses were abolished by the severance of the sciatic and saphenous nerve of the stimulated hindlimb. Compound action potentials were recorded from the distal cut end of the tibial of a saphenous nerve following electro-acupuncture stimulation of the hindpaw. The mean threshold of the compound action potentials of the myelinated fibers in saphenous nerves was 0.18 mA, while that of unmyelinated fibers was 3.0 mA. The mean threshold of the compound action potentials of the myelinated fibers in the tibial nerve was 0.20 mA of unmyelinated fibers was 3.3 mA. Severance of bilateral trunks did not affect the response, while severance of the third cranial nerves abolished the responses. In conclusion, electro-acupuncture stimulation applied to the hindpaws of the anesthetized rats induced excitation of myelinated or of both myelinated and unmyelinated afferent fibers of the tibial and saphenous nerve, and involved a reflex response of pupil dilation through the third cranial parasympathetic efferent nerve.     

CREEP-FATIGUE CRACK GROWTH AND FRACTOGRAPHY OF A TYPE 304 STAINLESS STEEL AT ELEVATED TEMPERATURE

Abstract— Creep-fatigue crack growth behaviour of a Type 304 stainless steel under four types of reversed loading patterns (P-P, P-C, C-P and C-C) was investigated and the results are discussed in the light of fracture mechanics and fractography. The crack growth rate for all of the four types of loading was successfully correlated in terms of the cyclic integral range λ J. It was unnecessary, for practical purpose, to divide Ay into a fatigue component, λ J _f, and a creep component, λ J _c, as has been done elsewhere. The transition of the correlating fracture mechanics parameter from fatigue to creep was not necessarily associated with the fracture morphology. This was related to the longer transition hold time in morphology in C-C type loading compared to C-P type loading, and was attributed to recovery of grain boundary sliding during the compression hold in the C-C type loading.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

Investigation of the effect of surface phosphate ester dispersant on viscosity by coarse-grain modeling of BaTiO slurry

To understand the role of phosphate ester dispersant, we investigated the rheology of a BaTiO slurry. For the model case, a coarse-grain molecular dynamics (CGMD) simulation was performed with the butyral polymer didodecyl hydrogen phosphate (DHP) in the toluene/ethanol solvent. By systematically analyzing the effect of DHP from an atomic-scale first principle and from all-atom MD to microscale CGMD simulation, we investigated how the adsorption of a DHP dispersant on a BaTiO surface affects the microstructure rheology of a BaTiO slurry. The first-principle and all-atom MD simulation suggests that DHP molecules prefer to locate near the BaTiO surface. CGMD simulation shows a reduction in viscosity with an increase in dispersants, suggesting that the dispersant population near the BaTiO surface plays a key role in controlling the rheology of the BaTiO slurry. In this study, we propose an approach for understanding the BaTiO slurry with molecular-level simulations, which would be a useful tool for efficient optimization of slurry preparation.     

Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)2]2 and SiH[N(CH3)2]3 precursors

Thin SiO₂ layers were deposited by atomic layer deposition (ALD) using either Bis-dimethylamino-silane (BDMAS: SiH₂(N(CH₃)₂)₂) or Tris-dimethylamino-silane (TDMAS: SiH(N(CH₃)₂)₃) precursors. The purpose of this study is to evaluate these precursors for their suitability for ALD of hafnium (Hf)-silicate gate dielectrics. The advantages of these precursors are that the melting points and vapor pressures are moderate. The thickness of SiO₂ deposited using ALD process is controlled by the number of growth cycles and the growth rate was different for each precursor, that for BDMAS being 1.5 times that for TDMAS at the same reactor pressure. The carbon impurity in the SiO₂ film deposited using BDMAS was about half an order of magnitude less than that using for TDMAS. Furthermore, the carbon impurity was reduced to about the detection limit of secondary ion mass spectrometry after high temperature annealing at 1000 °C during 5 s.     

Surface modification of biodegradable plastics by ion beams

Biodegradable plastics can be used as conventional plastics, while on disposal they decompose to water and carbon dioxide by microorganisms existing in natural environment. Products using biodegradable plastics have recently been developed in many companies pursuing ecology. In this study, surface modification of biodegradable plastics was carried out by inert ion beams for improvement of photo deterioration under an ultraviolet ray. The hardness of biodegradable plastics tended generally to decrease with irradiation of an ultraviolet ray. In this method, the hardness of ion-bombarded biodegradable plastics was kept at an initial value under an ultraviolet ray, because the modified layer by ion bombardment intercepted an ultraviolet ray. The hardness of He⁺ ion-bombarded biodegradable plastics showed larger value than that of Ar⁺ ion bombardment. He⁺ ion bombardment at ion energy of 10 keV produced the suitable property with both of high transmittance of a visible ray and high interception of an ultraviolet ray in a surface layer of biodegradable plastics.     

The role of sputter etching and annealing processes on the formation of β-FeSi2 thin films

For formation of β-FeSi₂ using ion beam sputter deposition (IBSD) method, sputter etching (SE) followed by thermal annealing is effective substrate treatment to obtain highly (100)-oriented β-FeSi₂ on Si(100). However, the best condition of these treatments are not yet known. In this work, the effect of SE together with annealing process on the orientation of the film is investigated. Prior to the deposition of Fe, the substrate is irradiated by Ne⁺ ions with various energy and fluence followed by thermal annealing at 1073 K for 60 min. The overall results show the most suitable SE condition using Ne⁺ ion on IBSD method is the energy of 1 keV with the fluence of 3.0×10¹⁹ ions /m².     

Te concentration dependent photoemission and inverse-photoemission study of FeSe1?xTex

We have characterized the electronic structure of FeSe_1−xTe_x for various x values using soft x-ray photoemission spectroscopy (SXPES), high-resolution photoemission spectroscopy (HRPES) and inverse photoemission spectroscopy (IPES). The SXPES valence band spectral shape shows that the 2 eV feature in FeSe, which was ascribed to the lower Hubbard band in previous theoretical studies, becomes less prominent with increasing x. HRPES exhibits systematic x dependence of the structure near the Fermi level (E_F): its splitting near E_F and filling of the pseudogap in FeSe. IPES shows two features, near E_F and approximately 6 eV above E_F; the former may be related to the Fe 3d states hybridized with chalcogenide p states, while the latter may consist of plane-wave-like and Se d components. In the incident electron energy dependence of IPES, the density of states near E_F for FeSe and FeTe has the Fano lineshape characteristic of resonant behavior. These compounds exhibit different resonance profiles, which may reflect the differences in their electronic structures. By combining the PES and IPES data the on-site Coulomb energy was estimated at 3.5 eV for FeSe.     

Decoupling properties of singular LQ regulation problem

Some properties of a limiting solution derived from a standard LQ regulator problem are discussed in the case where the input weighting matrix tends to zero, for a discrete time system. The explicit limiting solution is given in some literature. It is shown that the limiting solution is closely connected with a disturbance decoupling problem. Moreover it is pointed out that the limiting feedback gain with the help of feedforward gain constructs the decoupled system with the maximum number of blocks.     

The formation of graphene–titania hybrid films and their resistance change under ultraviolet irradiation

We report the fabrication of hybrid films of graphene and monolayer titania using a simple electrostatic self-assembly method. Ultraviolet (UV) responses of the hybrid films based on the graphene–titania structure were investigated. We observed that the resistance of the graphene–titania hybrid increased exponentially with UV irradiation time and decreased exponentially when UV was turned off. Time constants of the order of hundreds of seconds were identified and found to be sensitive to the gas environment of graphene. The UV response as well as the time constant is tunable by varying the number of titania layers. Our results confirmed that UV irradiation played a significant role in the resistance modulation of graphene as well as graphene–titania hybrid films.