Specimens of partially stabilized zirconia were slip cast from aqueous suspensions and sintered at 1500°C for 3 h. The relative density of the cast specimens and the firing shrinkage of the sintered specimens depend on the milling time for the suspension. Vickers hardness and KIC values of 11.46±s0.07 GN/m2 and 6.10 ±0.04 MN.m3/2, respectively, were obtained for all sintered specimens. The dispersion of the suspension is important in increasing the relative density of the cast specimens. 相似文献
In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiNx films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O2 oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiNx prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiNx films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm−1 of OFF leakage current and ON/OFF ratio of 107–108 are realized, i.e. the devices can operate similarly to conventional thermal CVD process. 相似文献
Relative intensity noise (RIN) in a vertical-cavity surface-emitting laser (VCSEL) was greatly reduced through the use of polarization control to eliminate competition between two orthogonal polarization states by ensuring there was only one polarization state. Polarization was stable with optical feedback of up to 10%. Polarization control was achieved by inducing a small loss anisotropy in fundamental transversal mode VCSEL's. Anisotropic post structures, such as a rectangular post, an oblique post, or a zigzag-sidewall post, were found to be effective in creating loss anisotropy without serious degradation of other VCSEL characteristics such as light-output power or beam profile 相似文献
Istanbul is one of the most famous historical cities in the world. However, the project alignment selected as the best of a range of alignments cannot avoid passing beneath the historical and cultural heritages of Istanbul as well as under ancient and densely inhabited areas of the city. This paper will explain some of the challenges related to the bored tunnels.
Historical buildings are vulnerable. Yet many existing residential and office buildings are old and constructed on minimal foundations. As a consequence, it is vital that any drawdown of groundwater and any ground settlements have to be minimized.
In addition, the connection between the immersed and bored tunnels will be made directly and totally underground, without the usual intermediate shafts and beneath the deep waters of the Bosphorus Strait. This operation needs the utmost control of the tunnel excavation face to ensure its stability and to minimize water ingress. Based on such considerations, tunnel excavation by tunnel boring machine (TBM) using a slurry shield and having the ability to operate under high pore pressures was recommended as the method of excavation for the main running tunnels.
The paper will explain how the design team from Avrasyaconsult – the Employer’s Representative – arrived at the final minimum, specific and functional requirements of the bored tunneling works which are to be carried out using the ‘FIDIC EPC/Turnkey Project’ conditions. 相似文献