Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities, strong light-matter interactions, and tunable optical absorption and emission. Here, metal-semiconductor-metal avalanche photodiodes (APDs) are fabricated from Bi₂O₂Se crystals, which consist of electrostatically bound [Bi₂O₂]²⁺ and [Se]²⁻ layers. The resulting APDs possess an intrinsic carrier multiplication factor up to 400 at 7 K with a responsivity gain exceeding 3,000 A/W and bandwidth of ~ 400 kHz at a visible wavelength of 515.6 nm, ultimately resulting in a gain bandwidth product exceeding 1 GHz. Due to exceptionally low dark currents, Bi₂O₂Se APDs also yield high detectivities up to 4.6 × 10¹⁴ Jones. A systematic analysis of the photocurrent temperature and bias dependence reveals that the carrier multiplication process in Bi₂O₂Se APDs is consistent with a reverse biased Schottky diode model with a barrier height of ~ 44 meV, in contrast to the charge trapping extrinsic gain mechanism that dominates most layered semiconductor phototransistors. In this manner, layered Bi₂O₂Se APDs provide a unique platform that can be exploited in a diverse range of high-performance photodetector applications.

     

Controlled Growth of Platinum Nanoparticles on Strontium Titanate Nanocubes by Atomic Layer Deposition

With an eye toward using surface morphology to enhance heterogeneous catalysis, Pt nanoparticles are grown by atomic layer deposition (ALD) on the surfaces of SrTiO₃ nanocubes. The size, dispersion, and chemical state of the Pt nanoparticles are controlled by the number of ALD growth cycles. The SrTiO₃ nanocubes average 60 nm on a side with {001} faces. The Pt loading increases linearly with Pt ALD cycles to a value of 1.1 × 10^?6 g cm^?2 after five cycles. Scanning electron microscopy images reveal discrete, well‐dispersed Pt nanoparticles. Small‐ and wide‐angle X‐ray scattering show that the Pt nanoparticle spacing and size increase as the number of ALD cycles increases. X‐ray absorption spectroscopy shows a progression from platinum(II) oxide to metallic platinum and a decrease in Pt? O bonding with an increase in Pt? Pt bonding as the number of ALD cycles increases.     

Enrichment of single-walled carbon nanotubes by diameter in density gradients

The bulk enrichment and separation of single-walled carbon nanotubes (SWNTs) by diameter has been achieved through ultracentrifugation of DNA-wrapped SWNTs in aqueous density gradients. The separation is identified by the visual formation of colored bands of SWNTs in the density range of 1.11-1.17 g cm(-3). The optical absorbance spectra of the separated SWNTs indicate that SWNTs of decreasing diameter are increasingly more buoyant. This nondestructive and scalable separation strategy is expected to impact the fields of molecular electronics, optoelectronics, and sensing where SWNTs of a monodisperse band gap are essential.     

Structural Modifications to Polystyrene via Self‐Assembling Molecules

We have previously reported that small quantities of self‐assembling molecules known as dendron rodcoils (DRCs) can be used as supramolecular additives to modify the properties of polystyrene (PS). These molecules spontaneously assemble into supramolecular nanoribbons that can be incorporated into bulk PS in such a way that the orientation of the polymer is significantly enhanced when mechanically drawn above the glass‐transition temperature. In the current study, we more closely evaluate the structural role of the DRC nanoribbons in PS by investigating the mechanical properties and deformation microstructures of polymers modified by self‐assembly. In comparision to PS homopolymer, PS containing small amounts (≤ 1.0 wt.‐%) of self‐assembling DRC molecules exhibit greater Charpy impact strengths in double‐notch four‐point bending and significantly greater elongations to failure in uniaxial tension at 250 % prestrain. Although the DRC‐modified polymer shows significantly smaller elongations to failure at 1000 % prestrain, both low‐ and high‐prestrain specimens maintain tensile strengths that are comparable to those of the homopolymer. The improved toughness and ductility of DRC‐modified PS appears to be related to the increased stress whitening and craze density that was observed near fracture surfaces. However, the mechanism by which the self‐assembling DRC molecules toughen PS is different from that of conventional additives. These molecules assemble into supramolecular nanoribbons that enhance polymer orientation, which in turn modifies crazing patterns and improves impact strength and ductility.     

Polymer Doping Enables a Two‐Dimensional Electron Gas for High‐Performance Homojunction Oxide Thin‐Film Transistors

High‐performance solution‐processed metal oxide (MO) thin‐film transistors (TFTs) are realized by fabricating a homojunction of indium oxide (In₂O₃) and polyethylenimine (PEI)‐doped In₂O₃ (In₂O₃:x% PEI, x = 0.5–4.0 wt%) as the channel layer. A two‐dimensional electron gas (2DEG) is thereby achieved by creating a band offset between the In₂O₃ and PEI‐In₂O₃ via work function tuning of the In₂O₃:x% PEI, from 4.00 to 3.62 eV as the PEI content is increased from 0.0 (pristine In₂O₃) to 4.0 wt%, respectively. The resulting devices achieve electron mobilities greater than 10 cm² V^?1 s^?1 on a 300 nm SiO₂ gate dielectric. Importantly, these metrics exceed those of the devices composed of the pristine In₂O₃ materials, which achieve a maximum mobility of ≈4 cm² V^?1 s^?1. Furthermore, a mobility as high as 30 cm² V^?1 s^?1 is achieved on a high‐k ZrO₂ dielectric in the homojunction devices. This is the first demonstration of 2DEG‐based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material.     

Visualizing Thermally Activated Memristive Switching in Percolating Networks of Solution-Processed 2D Semiconductors

Memristive systems present a low-power alternative to silicon-based electronics for neuromorphic and in-memory computation. 2D materials have been increasingly explored for memristive applications due to their novel biomimetic functions, ultrathin geometry for ultimate scaling limits, and potential for fabricating large-area, flexible, and printed neuromorphic devices. While the switching mechanism in memristors based on single 2D nanosheets is similar to conventional oxide memristors, the switching mechanism in nanosheet composite films is complicated by the interplay of multiple physical processes and the inaccessibility of the active area in a two-terminal vertical geometry. Here, the authors report thermally activated memristors fabricated from percolating networks of diverse solution-processed 2D semiconductors including MoS₂, ReS₂, WS₂, and InSe. The mechanisms underlying threshold switching and negative differential resistance are elucidated by designing large-area lateral memristors that allow the direct observation of filament and dendrite formation using in situ spatially resolved optical, chemical, and thermal analyses. The high switching ratios (up to 10³) that are achieved at low fields (≈4 kV cm⁻¹) are explained by thermally assisted electrical discharge that preferentially occurs at the sharp edges of 2D nanosheets. Overall, this work establishes percolating networks of solution-processed 2D semiconductors as a platform for neuromorphic architectures.