A technique for influencing CeO2 film orientation is demonstrated. This involves specific preliminary processing of the substrate, and the selection of oxygen partial pressure during the deposition process.
High quality thin (30–50 nm) “protective” (001) CeO2 epitaxial layers are prepared on (1 02) Al2O3. Structures comprising two epitaxial protective CeO2 layers, orientations (001) and (111), are made on the base of (0001) and (1 02) sapphire substrates. The interface between the epitaxial layers is <1 000 nm.
Preliminary results using this method are described, and the possibility of creating a “bi-epitaxial” transition in thin YBa2Cu3O7−x layers is explored. 相似文献