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利用变角X射线光电子谱对氧等离子体处理前后氧化铟锡ITO薄膜的表面化学状态进行了表征,实验发现用溶剂清洗之后的ITO薄膜表面存在一层厚度大约为0.7nm的非导电碳氢化合物污染层,氧等离子体处理方法可有效地消除C污染,而残存的少量污染C被部分氧化形成含羰基和基的化学物种,氧等离子体处理不仅提高了约5.0nm深度范围内的ITO薄膜表层中O的总体含量,更重要的是提高了膜层中O2-离子氧种的含量,改变了膜层化学结构,使得ITO薄膜表面的导电性能降低,同时改善了整个表面层化学结构的均匀性。 相似文献
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Three new 1,10-phenanthroline derivatives, dipyrido (3,2-f: 2,3-h) quinoxaline (DPQN), imidazo (5,6-f)-(1,10)-phenanthroline (IP) and 3-phenyl-imidazo (5,6-f)-(1,10)-phenanthroline (PIP) were designed and synthesized as a secondary ligand to coordinate with europium (Ⅲ) ion while dibenzoylmethane (DBM) was used as the first ligand. The compositions of the ligands and the europium (Ⅲ) ternary complexes were confirmed by elementary analysis, IR and 1H-NMR spectroscopy. The UV-visible absorption spectra, thermal stability, photoluminescence spectra, quantum yield and fluorescence life time of the Eu(Ⅲ) complexes were investigated. The effect of the structure of the secondary ligand on the photoluminescence of the complexes was discussed. The results show that the synthesized Eu(Ⅲ) complexes are good red-emitiing materials for potential application in fabrication of organic electroluminescence devices. 相似文献
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Three new 1,10-phenanthroline derivatives, dipyrido (3,2-f: 2,3-h) quinoxaline (DPQN), imidazo (5,6-f)-( 1,10)-phenanthroline (IP) and 3-phenyl-imidazo (5,6-f)- ( 1,10)-phenanthroline (PIP) were designed and synthesized was a secondary ligand to coordinate with europium (Ⅲ) ion while dibenzoylmethane (DBM) was used as the first ligand. The compositions of the ligands and the europium (Ⅲ) ternary complexes were confirmed by elementary analysis, IR and ^1H-NMR-spectroscopy. The UV-visible absorption spectra, thermal stability, photoluminescence spectra, quantum yield and fluorescence life time of the Eu( Ⅲ) complexes were investigated. The effect of the structure of the secondary ligand on the photoluminescence of the complexes was discussed. The results show that the synthesized Eu(Ⅲ) complexes are good red-emitiing materials for potential application in fabrication of organic electroluminescence devices. 相似文献
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利用变角X射线光电子谱对氧等离子体处理前后氧化铟锡ITO薄膜的表面化学状态进行了表征.实验发现用溶剂清洗之后的ITO薄膜表面存在一层厚度大约为0.7nm的非导电碳氢化合物污染层.氧等离子体处理方法可有效地消除C污染,而残存的少量污染C被部分氧化形成含羰基和羧基的化学物种.氧等离子体处理不仅提高了约5.0nm深度范围内的ITO薄膜表层中O的总体含量,更重要的是提高了膜层中O2-离子氧种的含量,改变了膜层化学结构,使得ITO薄膜表面的导电性能降低,同时改善了整个表面层化学结构的均匀性. 相似文献
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