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采用溶胶-凝胶法在硅衬底上成功制备出厚度约200nm的PZT薄膜,并以差热实验为基础,分别采用600℃、650℃和700℃三种退火温度,并对不同温度下的薄膜进行拉曼测试,分析三方-四方相变趋势,研究结果表明,中频区域的A1(2TO)振动模作为四方的一个标志,随着退火温度的升高强度逐渐增强,三方向四方转变;高频范围的A1(3TO)T振动模随着退火温度的升高强度也在逐渐增强,三方晶胞在减少而四方晶胞在增多,即随着退火温度的升高,三方有向四方转变的趋势。 相似文献
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PZT thin films were successfully prepared through sol-gel. The annealing temperature was confirmed through DTA analyzing. The trigonal and tetragonal phase transition was analyzed through Raman scattering. The intensity of the A1(2TO) mode and the A1(3TO)T mode were enhanced with the increase of the annealing temperature. So, the conclusions were obtained that the trigonal phase turned into a tetragonal phase as temperature increased. 相似文献
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