On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid...     

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.     

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers

Semiconductors - The photoelectric properties of GaN/SiC/Si(111) and GaN/Si(111) heterostructures grown by plasma-assisted molecular-beam epitaxy under the same growth conditions on identical...     

Electronic Structure of Molybdenum Oxide Oxidized at Different Pressures

Semiconductors - Electronic structure of molybdenum oxides obtained by the oxidation of molybdenum at an oxygen pressure of 1 Torr (thin film) and air (thick film) was studied. It was shown that a...     

The Electronic Structure of the Cs/<Emphasis Type="Italic">n</Emphasis>-GaN(0001) Nano-Interface

Electronic structures of the n-GaN(0001) surface and Cs/n-GaN(0001) interface with submonolayer Cs coverages were studied for the first time in situ by the photoelectron spectroscopy (PES) method. The spectra of photoemission from the valence band, surface electron states, and core levels (Ga 3d, Cs 4d, Cs 5p) under synchrotron excitation were measured in a range of photon energies within 50–150 eV. Evolution of the spectrum of surface states near the valence-band maximum was revealed by PES during the adsorption of Cs atoms. A metallic character of the Cs/n-GaN(0001) nano-interface is demonstrated.     

On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates

Semiconductors - The results obtained in a study of the synthesis of n+-GaN layers by plasma-assisted molecular-beam epitaxy on GaN/c-Al2O3 templates are reported. In particular, a method is...     

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy

Semiconductors - The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced...     

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures

Semiconductors - Using a complex of structural and spectroscopic methods of diagnostics, the influence of a nanoporous-silicon (por-Si) transition layer on the optical properties of GaN layers...     

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Semiconductors - The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the...     

A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface

Technical Physics Letters - The electronic properties of the Ba/SiC/Si(111)-8° nanointerface have been studied for the first time by photoelectron spectroscopy using synchrotron radiation. The...