Deposition of cubic silicon carbide thin films via thermal decomposition of methyltrichlorosilane in hydrogen

The conditions for vapor-phase growth of thin SiC films on silicon substrates are optimized. The thickness of the grown films varies from 100 Å to 10 µm, depending on the deposition conditions. The 3C-SiC films grown under the optimal conditions are highly homogeneous, have mirror-smooth surfaces, and adhere well to the substrate.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 297–300.Original Russian Text Copyright © 2005 by Ivanova, Aleksandrov, Demakov, Starostin, Shemardov.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90–150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.     

Implantation of Silicon Ions into Sapphire: Low Doses

Semiconductors - After the ion implantation of silicon into sapphire followed by high-temperature annealing, silicon and aluminosilicate precipitates are observed in the surface region of sapphire....     

Specific features of solid-phase recrystallization of silicon-on-sapphire structures amorphized by oxygen ions

Silicon films with a low defect concentration have been formed on a sapphire substrate using the process of solid-phase recrystallization. The method of X-ray rocking curves has been used in order to assess the crystalline quality of the silicon-on-sapphire structures. The values of the full width at half-maximum of intensity (FWHM) show that a silicon layer with the thickness d = 1000–2500 Å and with high crystalline quality is formed as a result of implantation of oxygen ions (with the energy of 130 keV and the dose of 1 × 10¹⁵ cm^?2) with subsequent annealing (for 30 min at 550°C and for 1 h at 1000°C).     

Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface

The use of the process of solid-phase recrystallization reduces to a great extent the number of defects in the silicon layer. An amorphous layer was formed by implantation of silicon ions. The crystalline quality of the SOS structures has been assessed by the method of high-resolution double-crystal X-ray diffraction. Silicon layers with a thickness d = 1000–2500 Å and a high crystalline quality have been obtained after implantation of 150-keV silicon ions with subsequent high-temperature annealing.