Fault trees—Problems and the modern state of investigations

Published in Kibernetika i Sistemnyi Analiz, No. 3, pp. 128–150, May–June, 1994.     

Fabrication of Strain-Relaxed Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>x</Subscript>/Si(001) Buffer Layers of Low Surface Roughness

The results are presented of the fabrication of strain-relaxed graded Si_{1 − x} Ge_x/Si(001) buffer layers with a maximum Ge fraction of about 0.25 that have a low density of threading dislocations (<10⁶ cm⁻²) and low surface roughness. The buffer layers are grown by atmospheric-pressure hydride CVD. It is found that chemical mechanical polishing can reduce their surface roughness to a level comparable with that of the original Si(001) substrates. It is shown that the polished buffer layers can serve as substrates for MBE-grown SiGe/Si heterostructures.__________Translated from Mikroelektronika, Vol. 34, No. 4, 2005, pp. 243–250.Original Russian Text Copyright © 2005 by Vostokov, Drozdov, Krasil’nik, Kuznetsov, Novikov, Perevoshchikov, Shaleev.     

Electromagnetic wave reflection from Fe/Cr nanostructures

The reflection of electromagnetic waves in the millimeter wave band from Fe/Cr nanostructures has been studied. It is established that the giant magnetoresistance (GMR) in the nanostructure leads to an increase in the reflection and a decrease in the transmission of microwaves, while the magnetic resonance leads to a decrease in both the reflection and transmission coefficients.     

Development of improved methods for type testing present day mediumvoltage circuit breakers for outdoor service

Type testing for fault currents for medium-voltage circuit breakers rated at 15 kV to 72.5 kV is addressed. The ANSI designation of a new class of definite-purpose circuit breakers capable of switching transformer secondary faults and the introduction of the requirement for short-line-fault tests for breakers rated 72.5 kV and below have increased the difficulty of performing type tests in a testing laboratory. It is concluded that synthetic testing using the parallel current injection circuit is described in ANSI C37.081 provides the best available method for proving these complex requirements for medium-voltage circuit breakers     

New high-efficiency low-waste technology at the Vyksa Metallurgical Plant for operating metallurgical equipment with the use of Kompaks® monitoring systems

Introduction of the BER? KOMPAKS® automated system at the Vyksa Metallurgical Plant to safely and efficiently manage the operation of the plant’s equipment has allowed the facility to begin operating that equipment based on real-time evaluations of its actual physical condition. Introduction of the new system has also allowed better coordination of repair-scheduling with ongoing production operations, significantly improved the reliability and readiness of the equipment for operation at 100% capacity, completely eliminated the human factor from the process of monitoring the condition of equipment, and made it possible to check the quality and timeliness of equipment maintenance and repair work so as to ensure safe, efficient operation of the entire production complex.     

Erbium ion electroluminescence in p ++/n +/n-Si:Er/n ++ silicon diode structures

Results of experimental studies of erbium ion electroluminescence in p ⁺⁺/n ⁺/n-Si:Er/n ⁺⁺ silicon diode structures grown by sublimation molecular-beam epitaxy are discussed. The distinctive feature of these structures is that the regions of electron flux formation of (n ⁺-Si) and impact excitation of erbium ions (n-Si:Er) are spaced. The influence of the n ⁺-Si layer thickness on electrical and electroluminescent properties of diodes was studied. It was shown that n ⁺-Si layer thinning causes the transformation of the structure breakdown mechanism from tunneling to avalanche. The dependence of the Er³⁺ ion electroluminescence on the thickness of the heavily doped n ⁺-Si region is bell-shaped. At the n ⁺-Si-layer doping level n ≈ 2 × 10¹⁸ cm^?3, the maximum electroluminescence intensity is attained at an n ⁺-Si layer thickness of ～23 nm.