排序方式: 共有6条查询结果,搜索用时 0 毫秒
1
1.
Ezis A. Liou L.L. Ikossi-Anastasiou K. Evans K.R. Stutz C.E. Jones R.L. 《Electron Device Letters, IEEE》1989,10(4):168-170
The fabrication is reported of a high-gain (Ga,Al)As/GaAs heterostructure bipolar transistor (HBT) with a p-spike-doped base that is depleted at equilibrium. The device structure, based on that proposed for a bipolar inversion-channel field-effect transistor (BICFET), was grown by molecular-beam epitaxy (MBE). Fabricated transistors, containing an AlAs/n-GaAs superlattice emitter layer, exhibited DC current gains of up to 500. Maximum current gains of tested devices occurred at collector current densities in the mid-103 A cm -2 range. It is postulated that the induced base in these transistors is formed predominantly by the forward-bias action on the base-emitter junction 相似文献
2.
Kyono C.S. Binari S.C. Kruppa W. Ikossi-Anastasiou K. Hier H.S. 《Electronics letters》1992,28(15):1388-1390
A seven monolayer AlAs layer was used as an etch stop at the emitter-base heterojunction of an Npn In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HBT. The etch-stop HBTs displayed higher DC gain and similar microwave performance when compared to devices without the AlAs layer.<> 相似文献
3.
Double heterojunction bipolar transistors based on the Al/sub x/Ga/sub 1-x/As/GaAs/sub 1-y/Sb/sub y/ system are examined. The base layer consists of narrow band gap GaAs/sub 1-y/Sb/sub y/ and the emitter and collector consist of wider band gap Al/sub x/Ga/sub 1-x/As. Preliminary experimental results show that AlGaAs/GaAsSb/GaAs DHBTs exhibit a current gain of five and a maximum collector current density of 5*10/sup 4/ A/cm/sup 2/.<> 相似文献
4.
GaAsSb for heterojunction bipolar transistors 总被引:1,自引:0,他引:1
The advantages of using GaAsSb in heterojunction bipolar transistors (HBT) are discussed with emphasis on two recent experimental results in the AlGaAs/GaAsSb material system. The performances of a prototype n-p-n AlGaAs/GaAsSb/GaAs double HBT (DHBT) that exhibits stable current gain with maximum collector current density of 5×10 4 A/cm2, and a p-n-p AlGaAs/GaAs HBT with a superlattice GaAsSb emitter ohmic contact which has a specific contact resistivity of 5±1×10-7 Ω-cm2 across the sample, are examined 相似文献
5.
Ikossi-Anastasiou K. Ezis A. Evans K.R. Stutz C.E. 《Electron Device Letters, IEEE》1992,13(8):414-417
Narrow-based heterojunction bipolar transistors (NBHBTs) in the AlGaAs/GaAs material system, with a nominal base thickness of 50 Å, exhibit maximum small-signal common-emitter current gains of 1400 at 300 K and 3000 at 80 K. The performance of the device is attributed to the superlattice graded-emitter contact and a novel planar base access fabrication process. Low-temperature measurements indicate that the maximum current gain increases exponentially with decreasing temperature until it saturates around 200 K, suggesting a tunneling-limited current transport mechanism 相似文献
6.
Early voltage in heterojunction bipolar transistors: Quantum tunneling and base recombination effects 总被引:1,自引:0,他引:1
Clifford M. Krowne Kiki Ikossi-Anastasiou Elias Kougianos 《Solid-state electronics》1995,38(12):1979-1991
An extension of the thermionic emission expression for Early voltage VA for heterojunction bipolar transistors including quantum mechanical tunneling and base recombination effects is provided. The theoretical model is based on a single flux treatment of the carrier transport invoking the concise notation of scattering matrices. VA is numerically evaluated under the WKB quantum mechanical approximation for triangular and parabolic barriers. The temperature dependence of the Early voltage is simulated numerically and compared to earlier theoretical VA predictions and actual experimental results of VA in heterojunction bipolar transistors. 相似文献
1