异质结光晶体管的研究与进展

回顾了异质结光晶体管(HPT)在近年来的重要进展,综合分析了HPT的工作原理以及影响其性能的主要参数。综述了不同材料制作的HPT的研究现状,得出了目前限制HPT发展的主要因素及当前应重点解决由于基区表面复合等效应导致的增益下降和由于结电容的充放电限制的响应带宽等问题的结论。     

UC3875在超声电源功率控制系统中的应用

根据超声波发生器的功率控制系统原理 ,阐述了移相控制策略对超声波发生器输出电压波形的影响 ,介绍了移相控制专用芯片UC3875的电路结构和使用设计方法。     

天然气吸附储存脱附过程的动态模拟

通过热动力学计算,认识了脱附过程当中储罐内温度剖面分布的典型特征:储罐轴心处的温度下降幅度最大。分析了脱附过程当中储罐壁的热交换、吸附剂的导热系数以及储罐内的初始压力对储罐内的温度剖面的影响。结论是加强储罐外壁的热交换、增大吸附剂的导热系数皆能改善吸附储罐内的温度剖面。     

Effect of Fog and Clouds on the Image Quality in Millimeter Communications

The effect of fog and clouds in millimeter communication is discussed, and the attenuation caused by fog and clouds is reviewed. Signal-to-noise ratio (SNR) of image is derived using relating models of fog and clouds attenuation. According to the relation of image quality and its signal-to-noise ratio, the system behavior is forecasted theoretically. It is shown that the signal-to-noise ratio of receiver at certain transmitter power is inverse with radio wave frequency, from about 70dB at 10GHz to 48dB for fog and 49dB for clouds. The image quality of received signal at certain transmitter power is inverse with radio wave frequency, from about 7 grade at 10GHz to 5.27 grade for fog and 5.37 grade for clouds. The above calculated results are consistent with experimental results.     

Windows系统中两种动态交换数据的方法

本文介绍了Ｗｉｎｄｏｗｓ环境下基于消息的ＤＤＥ和基于动态链接库的ＤＤＥＭＬ的区别，并详细叙述了如何使用ＤＤＥＭＬ编制Ｗｉｎｄｏｗｓ应用程序。     

The Synthesis of Sulfated Titanium Oxide Nanotubes

TiO₂ nanotubes can be prepared in gram quantities by treating anatase TiO₂ powder with concentrated NaOH solution. These TiO₂ nanotubes acquired strong acidity after being impregnated with sulfuric acid solution and calcined at 300 °C. The anatase TiO₂ powder used to prepare the nanotube did not catalyze the esterification between cyclohexanol and acetic acid, while sulfated TiO₂ nanotubes were very reactive toward the esterification reaction.     

APT（STLRI）—1.78型单模光纤（缆）连接器简介

利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.     

卧式厚箔剪切机下刀摆动的消除方法

介绍了一种当前铝加工设备中常见的卧式厚箔剪切机.重点分析了其中剪切装置的工作原理,并就其缺陷提出改进方案.