Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes

The steady and dynamic properties are comparatively simulated results show that the n-doped LED exhibits is mainly attributed to the higher carrier radiative experimental results perfectly. investigated for the n-doped and non-doped InGaN LEDs. The the superior luminescence and modulation performance, which rate of n-doped LED. The results can explain the reported     

量子级联激光器的电路模型分析

通过分析量子级联激光器(QCL)中的电子在量子阱输运的单极行为,得到它的速率方程,以此为基础建立起它的等效电路模型,利用PSPICE进行电路模拟,得到了它的频率响应特性,并对可能影响它的调制特性的一些因素进行了分析.     

基于对数关系的多量子阱VCSELs阈值特性研究

采用光增益与载流子浓度的对数关系，考虑到非辐射复合的影响，从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSELs)的速率方程。讨论了阈值电流密度、最佳阱数等与器件参数(腔长和端面反射率)之间的依赖关系。为改善VCSELs阈值特性和优化器件结构提供了理论依据。     

应用原子层外延技术分析Turbo-Disk MOCVD 外延生长模式

应用原子层外延与分子层外延的理论研究了Turbo-Disk MOCVD外延生长过程,发现生长主要发生在衬底表面的台阶处,当通过控制生长参数达到优质外延时,实际上是一种亚原子外延过程．优化调整反应参数实现了优质外延。     

量子级联激光器噪声特性的电路模拟

对文献报道的量子级联激光器的速率方程组进行简化,并引入Langevin噪声源,在单模与线性增益的情况下对速率方程进行了小信号处理,在此基础上构建了激光器的小信号电路模型,spice仿真结果表明激光器的噪声频谱的3-dB截止频率随光功率增加而增加,而噪声强度则随光功率增加而减少,当光功率很大时,它们都趋向于饱和值,得到的...     

Al composition dependency of interface phonon in the wurtzite quantum cascade laser

The interface(IF) phonons of the wurtzite quantum cascade lasers(QCL) are investigated using the transfer-matrix method(TMM).The IF modes are presented in the longitudinal optical-phonon frequency for the Al0.2Ga0.8N/GaN and Al0.15Ga0.85N/GaN QCLs,and two IF modes can be changed into other modes if their wave numbers are less than the special values.Owing to the more dispersive properties of IF phonons with the increasing Al composition,the scattering rates in both QCLs increase with the Al composition.     

量子级联探测器研究进展

综述了基于三大化合物半导体材料(GaAs基、InP基与GaN基)的量子级联探测器(QCD)的进展,对这三种材料体系的QCD的各种技术指标如光电流响应度、电阻、电流-电压特性等做了详细的说明,最后对其他半导体材料及新型结构的QCD做了展望.     

Zone-center optical phonons in wurtzite InAlN crystal

An experimental study of the optical phonons is presented for InAlN epilayers lattice-matched with GaN by means of Raman scattering,and theoretical simulations are done to investigate the zone-center optical phonons of InAlN alloy by using the modified random element isodisplacement(MREI)model.The calculated findings show that the LO and TO branches of InAlN crystal both exhibit nonlinear properties.A comparison is made between the theoretical results and the experimental data,and it shows that they are both consistent for the A 1 (LO)phonons of InAlN epilayers.     

AlGaInP四元系材料双异质结发光二极管的最佳Al组分分析

鉴于双异质结发光二极管(DH—LED)限制层的Al组分的不确定性，本文通过分析载流子在双异质结中的输运及受约束情况，从理论上剖析了Al组分确定为一个最合适的取值时，有源层中的载流子应有一个最大数量的复合，此时LED的复合效率最高、发光最强。这个最佳Al组分的确认，对于器件结构设计以及相关的MOCVD材料生长有指导意义。     

A1GaInP四元系材料双异质结发光二极管的最佳Al组分分析

鉴于双异质结发光二极管(DH—LED)限制层的Al组分的不确定性,本文通过分析载流子在双异质结中的输运及受约束情况,从理论上剖析了Al组分确定为一个最合适的取值时,有源层中的载流子应有一个最大数量的复合,此时LED的复合效率最高、发光最强。这个最佳Al组分的确认,对于器件结构设计以及相关的MOCVD材料生长有指导意义。