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The effects of F-doping concentration on geometric structure, electronic structure and optical property of β-Ga2O3 were investigated. All F-doped β-Ga2O3 with different concentrations are easy to be formed under Ga-rich conditions, the stability and lattice parameters increase with the F-doping concentration. F-doped β-Ga2O3 materials display characteristics of the n-type semiconductor, occupied states contributed from Ga 4s, Ga 4p and O 2p states in the conduction band increase with an increase in F-doping concentration. The increase of F concentration leads to the narrowing of the band gap and the broadening of the occupied states. F-doped β-Ga2O3 exhibits the sharp band edge absorption and a broad absorption band. Absorption edges are blue-shifted, and the intensity of broad band absorption has been enhanced with respect to the fluorine content. The broad band absorption is ascribed to the intra-band transitions from occupied states to empty states in the conduction band. 相似文献
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研究了不同厚度ITO膜的大尺寸超薄导电玻璃的翘曲度,ITO膜形成期间基片温度对ITO膜层晶体化程度的影响及不同基片温度下形成的ITO膜层在不同的退火条件下的退火前、后的电阻率和膜压应力.实验发现,ITO膜层的很高的压应力是导致导电膜玻璃翘曲的直接原因;采用室温沉积非晶ITO膜,然后经高温热退火可获得低膜压应力多晶相ITO膜.基于实验结论,提出了一种适合批量生产的低翘曲度ITO膜导电玻璃的制备工艺. 相似文献
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制备了透射式GaAs阴极组件,测量了GaAs阴极激活过程中阴极光 敏度和发射电子平均横向能量随激活时间的变化,用扫描电镜观察GaAs(Cs,O)阴极表面形貌,结果表明:GaAs(Cs,O)阴极发射电子横向能量取决于GaAs晶格温度、阴极表面形貌和电子在能带弯曲区的多次散射,与(Cs,O)激活层无关。 相似文献
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风化料做坝体防渗的防渗性能、预防拱效应作用,以及其用作防渗体的良好力学性质,阐述了风化料的应用前景。 相似文献
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微通道板(MCP)电子透射膜是决定Ⅲ代微光像管稳定性和可靠性的主要因素.采用有机衬底掩膜技术和冷基底溅射相结合的方法在MCP输入面制备非晶态Al2O3电子透射膜,测量了带膜MCP紫外光辐照清洗前后的电学特性. 讨论在多孔MCP输入面形成连续电子透射膜与气体辉光放电的关系,工艺失败对MCP的危害性. 相似文献
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利用传统的陶瓷制备工艺制备了Sr掺杂的WO3陶瓷样品,测量了样品的显微结构和电学性质.结果表明,对于Sr掺杂来说,浓度为2 mol%是一个临界点,在这一点处电学性质和微观结构都将发生显著的变化.掺杂浓度为0.2 mol%的样品表现出较高的非线性系数8.7.实验中发现部分样品表现出电学的不稳定性,我们认为这种不稳定性与相共存以及由此导致的极化有关. 相似文献