Study on luminescence characteristics of blue OLED with phosphor-doped host-guest structure

In this study, we design and fabricate phosphor-doped host-guest structure organic light-emitting diodes (OLEDs), where the blue-ray iridium complex electrophosphorescent material FIrpic acts as object material. Properties of the device can be accommodated by changing the host materials, dopant concentration and thickness of the light-emitting layer. The study shows that the host material N,N'-dicarbazolyl-3,5-benzene (mCP) has a higher triplet excited state energy level, which can effectively prevent FIrpic triplet excited state energy backtracking to host material, thus the luminous efficiency is improved. When mCP is selected as the host material, the thickness of the light-emitting layer is 30 nm and the dopant concentration is 8 wt%, the excitons can be effectively confined in the light-emitting region. As a result, the maximum current efficiency and the maximum brightness of the blue device can reach 15.5 cd/A and 7 196.3 cd/m², respectively.     

Buffer-modified C60/pentacene as organic charge generation layer based on Al and MoO3

We demonstrate tandem organic light-emitting diodes (TOLEDs) with excellent performance using Al and MoO₃ buffer-modified C₆₀/pentacene as charge generation layer (CGL). Al and MoO₃ were used as the electron and hole injection layers of C60/pentacene CGL, respectively. Green phosphorescence TOLEDs with the structure of ITO/NPB/mCP:Ir(ppy)₃/TPBi/Al/C₆₀/pentacene/MoO₃/NPB/mCP:Ir(ppy)₃/TPBi/Cs₂CO₃/Al were fabricated. The results show that the inserted Al and MoO₃ can effectively increase the charge injection capacity of organic CGL, resulting the improvement of luminance and current efficiency of TOLEDs. The turn-on voltage of TOLEDs is much lower than that of single-unit device, and the current efficiency is more than 2 times larger than that of the single-unit device. TOLEDs can exhibit excellent photoelectric performance when the thicknesses of Al, C₆₀, pentacene and MoO₃ are 3 nm, 15 nm, 25 nm and 1 nm, respectively. The maximum luminance and current efficiency are 7 920.0 cd/m² and 16.4 cd/A, respectively. This work is significant to build new CGL structures for realizing high-performance TOLEDs.     

插入层TmP_yPb对白色有机电致发光二极管色纯度的影响

基于三原色白光器件ITO/NPB/TCTA/Ir(MDQ)2(acac)∶TCTA/TCTA/FIrpic∶TmPyPb/Ir(ppy)3∶TmPyPb/TmPyPb/LiF/Al,通过在其绿色与蓝色发光层之间插入不同厚度的TmPyPb,研究了该插入层的厚度对器件色纯度的影响。研究表明,插入层厚度的改变能够影响能量转移及调节激子的分布,当插入层厚度为4nm时,器件色坐标为(0.33,0.36),最大发光效率达11.58cd/A。     

Tandem organic light-emitting diodes with buffer- modified C60/ZnPc as charge generation layer

In this paper, a significant enhancement in current efficiency of the green tandem organic light-emitting diodes (TOLEDs) is demonstrated, which is based on a buffer-modified charge generation layer (CGL) of fullerene carbon (C60)/zinc-phthalocyanine (ZnPc). Al and MoO3 were used as the buffer-modified layers on both sides of the bilayer C60/ZnPc, respectively. Experimental results show that the inserted Al and MoO3 layers can effectively increase the electron extraction of the CGL for obtaining the device performance enhancement. Compared with that of the green TOLEDs without buffer-modified layers in CGL (37.3 cd?A-1), the current efficiency of the green TOLEDs is increased to 54.1 cd?A-1. Further study results find that the performance can also be improved by optimizing the thickness of Al in the CGL. The maximum current efficiency and maximum luminance of the green TOLEDs achieve 63.5 cd?A-1 and 17 873 cd?m-2, respectively, when the multilayer structure of the CGL is Al (3 nm)/C60 (5 nm)/ZnPc (5 nm)/MoO3 (3 nm).     

以DCJTB为颜色转换层的三原色WOLED研究

对一系列蓝光和蓝绿光器件展开研究,发现结构为ITO/NPB(40nm)/mCP(5nm)/mCP∶FIrpic(30nm)/TPBi(2nm)/TPBi∶Ir(ppy)₃(10nm)/TmPyPB(40nm)/LiF(1nm)/Al的蓝绿光器件具有最佳光电性能,其电流效率高达38.3cd/A。基于该结构,结合采用红色荧光染料DCJTB制备的颜色转换层实现了三原色白色有机发光二极管(White Organic Light-emitting Diode,WOLED)。结果表明,器件性能可通过DCJTB浓度进行调控,当其浓度为0.7%时,实现了电流效率为23.9cd/A、色坐标为(0.35,0.43)及色温为5121K的WOLED,且电流密度从1mA/cm²变化到100mA/cm²,其色坐标仅漂移(0.005,0.003)。     

有机电荷产生层对叠层磷光OLED器件性能的影响

采用C60/pentanece作为非掺杂电荷产生层,并在其两边各插入Al和MoOs薄层作为C60和pentanece的电子注入层和空穴注入层,在此基础上制备了结构为ITO/NPB/mCP∶8wt％Ir (ppy) 3/TPBi/Al/C60/pentanece/MoOs/NPB/mCP∶8wt％Ir (ppy) 3/TPBi/Cs2CO3/Al的双发光单元叠层绿色磷光有机发光器件(OLED).实验表明,增加Al和MoO3电荷注入层,可有效改善有机电荷产生层的电荷注入能力,提高叠层OLED器件的发光亮度和电流效率.叠层器件的启亮电压明显低于单个器件的1/2,但电流效率是单层器件的两倍以上.当Al/C60/pentanece/MoO3的厚度分别是3、15、25和1 nm时,叠层OLED器件具有最佳的光电性能,其最大亮度和最大电流效率分别是7 920.0 cd/m2和16.4 cd/A.