难熔金属硅化物的喇曼散射

用电子束蒸发方法在10~(-7)托真空中使单晶硅上蒸上一层Ti膜后,于N_2中进行从500-1000℃10秒钟的快速热退火,由激光喇曼光谱结合薄层电阻测量和转靶X射线衍射研究分析了TiSi_2的形成.退火温度高于680℃时,观察到207和244cm~(-1)波数处的两个TiSi_2的特征喇曼峰,当退火温度为580℃时,只有270,297和3ncm~(-1)的三个喇曼峰,这些可能是钛的氧化物和不包括TiSi的钛硅化物.     

共溅射钨硅化合物真空快速热退火行为(英文)

The behavior of co-sputtering tungsten silicide after vacuum rapid annealing at 1000-1100℃ for 15s is investigated by Raman scattering, scanning electron microscope, X-ray diffraction, Auger electron spectrum and resistivity measurements. There are two Raman peaks at 331 and 450cm-1, and their intensities increase with the temperature rise of rapid thermal annealing. Scanning electron micrograph exhibits crystallization at 1000℃ and its enhancement with increase of annealing temperature. In addition to the (002), (101), (110), (103), (112) and (200) diffraction peaks of WSi2, there are some W5Si3 peaks in X-ray diffraction pattern. However, the composition of WSi2 is found in Auger electron spectrum at 1000℃, and the measurement results of sheet resistance also conclude WSi2 characteristics.