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Molecular beam epitaxy growth of an InxGa1-xAs/GaAs quantum well(QW) structure(x equals to 0.17 or 0.3) on offcut(100) Ge substrate has been investigated.The samples were characterized by atomic force microscopy,photoluminescence(PL),and high resolution transmission electron microscopy.High temperature annealing of the Ge substrate is necessary to grow GaAs buffer layer without anti-phase domains.During the subsequent growth of the GaAs buffer layer and an InxGa1-xAs/GaAs QW structure,temperature plays a key role. The mechanism by which temperature influences the material quality is discussed.High quality InxGa1-x As/GaAs QW structure samples on Ge substrate with high PL intensity,narrow PL linewidth and flat surface morphology have been achieved by optimizing growth temperatures.Our results show promising device applications forⅢ-Ⅴcompound semiconductor materials grown on Ge substrates. 相似文献
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为获取高性能药型罩材料,采用铜模水淬制备W-Cu-Zr六元非晶合金。该非晶合金以Cu-Zr-Ni系铜基非晶为母合金,添加钨、钽、硼、锆、镍等元素,并根据各元素原子半径、密度、熔点、沸点,确定出最佳配比组合。结果表明:采用此材料制得?10 mm×50 mm圆柱形试样的抗拉强度为1 820 MPa,伸长率为16.5%,断裂强度达2 030 MPa,综合性能优越,用于药型罩材料有利于提高侵彻威力。 相似文献
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本文研究了斜切割(100)Ge衬底上InxGa1-xAs/GaAs量子阱结构的分子束外延生长(In组分为0.17或者0.3)。所生长的样品用原子力显微镜、光致发光光谱和高分辨率透射电子显微镜进行了测量和表征。结果发现,为了生长没有反相畴的GaAs缓冲层,必须对Ge衬底进行高温退火。在GaAs外延层和InxGa1-xAs/GaAs量子阱结构的生长过程中,生长温度是一个至关重要的参数。文中讨论了温度对于外延材料质量的影响机理。通过优化生长温度,Ge衬底上的InxGa1-xAs/GaAs量子阱结构的光致发光谱具有很高的强度、很窄的线宽,样品的表面光滑平整。这些研究表面Ge 衬底上的III-V族化合物半导体材料有很大的器件应用前景。 相似文献
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