A method for calculating invariant subspaces of symmetric hyperbolic equations

An algorithm is constructed for calculating invariant subspaces of symmetric hyperbolic systems arising in electromagnetic, acoustic, and elasticity problems. Discrete approximations are calculated for subspaces that correspond to minimal eigenvalues and smooth eigenfunctions. Difficulties related to the presence of an infinite-dimensional kernel in the differential operator are successfully handled. The efficiency of the algorithm is demonstrated using acoustics equations.     

Stimulated raman scattering in fiber-optic communication lines

Stimulated Raman scattering (SRS) in a long-distance fiber-optic communication line with wavelength-division multiplexing (WDM) is studied theoretically at a high power of the signal transmitted. A new criterion for determining the SRS threshold is used to calculate the critical input power versus the number of optical channels and frequency separation between them. The theoretical model is verified experimentally. SRS interaction between two channels in a communication line with an SRS amplifier for which the optical waveguide of the line serves as a nonlinear medium is measured.     

Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots

In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capture data by a similar method to that used for emission, by the box-car method. The capture activation energies are determined and compared with the emission activation energies.     

Ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice observed by use of Terahertz fields

We report an experimental study indicating ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice under the action of a THz field. Our experiment was performed for an InGaAs/InAlAs superlattice with the conduction electrons undergoing miniband transport. We applied to a superlattice a dc bias that was slightly smaller than a critical bias necessary for the formation of space-charge domains caused by a static negative differential conductivity. Additionally subjecting the superlattice to a strong THz field, resulted in a dc transport governed by the formation of domains if the frequency of the field was smaller than an upper frequency limit (~3 THz). From this frequency limit for the creation and annihilation of domains we determined the characteristic time of the domain buildup. Our analysis shows that the buildup time of domains in a wide miniband and heavily doped superlattice is limited by the relaxation time due to scattering of the miniband electrons at polar optic phonons. Our results are of importance for both an understanding of ultrafast dynamics of pattern formation in nanostructures and the development of THz electronic devices.Received: 25 March 2004, Published online: 23 July 2004PACS: 72.20.Ht High-field and nonlinear effects - 72.30. + q High-frequency effects; plasma effects - 73.21.Cd SuperlatticesK.N. Alekseev: Permanent address: Department of Physical Sciences, P.O. Box 3000, University of Oulu FIN-90014, Finland.     

Modification of GaAs by medium-energy N<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> ions

The modification of GaAs with a 2500-eV beam containing N ₂ ⁺ and Ar⁺ ions is examined with Auger electron spectroscopy. Most implanted nitrogen atoms are found to react with the matrix, substituting arsenic atoms to produce a several-nanometer-thick layer of the single-phase GaAs_1−x N_x (x=6%) solid solution. The GaN phase is absent. Displaced arsenic atoms and nitrogen atoms unreacted with the matrix are present in the layer and on its surface. The former segregate, whereas the latter form molecules.     

The influence of glass coating on the single domain wall potential in amorphous glass-coated Fe-based microwires

The effect of the glass coating on the single domain wall potential in amorphous glass-coated Fe-based microwire has been studied by the switching field distribution technique. The thermoactivated mechanism model is used to describe the thermally activated switching through the complex energy barrier in amorphous FeSiB microwires. Glass removal leads to the increase of the probability of the thermally activated switching pointing to the decrease of the energy barrier.     

Experimental study of regions of reversed magnetization in an amorphous layer of Co70Fe5Si10B15

The characteristics of the distribution of magnetization and remagnetization of microsections of the surface in the amorphous alloy Co₇₀Fe₅Si₁₀B₁₅, prepared in the form of thin ribbons, were studied by the magnetooptical method. It was found that the magnetization I on the surface of the amorphous ribbon studied was strongly nonuniform. It was established that heat treatment (HT) of the sample leads to the appearance of regions of reversed magnetization in the surface layer of the ribbon, while thermomagnetic annealing reduces the nonuniformity of I. The conservation of the transverse component in the HT sample in fields where the magnitude of the component of magnetization parallel to the length of the ribbon remains virtually unchanged suggested that a domain structure of the magnetization ripple type, owing to the strong microdispersion of the magnetic anisotropy, is realized in this sample.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 89–94, March, 1988.