激光能量对反钙钛矿GaCMn_3薄膜结构与物性的影响

本文采用脉冲激光沉积方法在LaAlO3(001)单晶衬底上制备了反钙钛矿GaCMn3薄膜,通过控制制备过程中脉冲激光的能量,研究了不同激光能量条件对GaCMn3薄膜结构与物理性能的影响.分别利用X射线衍射仪、原子力显微镜、超导量子干涉仪和物理性能测试系统,对所制备的薄膜的晶体结构、表面形貌和磁性、电输运性质进行了研究.结果表明,制备的样品均为具有多个晶面取向的反钙钛矿薄膜,且薄膜结构和物性明显随制备激光能量的变化而变化.当激光能量为450mJ时,制备的薄膜多晶面取向性最弱,结晶性和表面形貌最优良.实验所得的薄膜均表现出顺磁-铁磁-反铁磁相转变,然而转变过程比块材较平缓,同时薄膜的电阻率并未表现出块材中的突变特征,我们推测该现象很可能是由衬底的应力及衬底的晶格膨胀对薄膜反常晶格变化的抑制作用造成的.     

Extended phase diagram of La1-xCaxMnO3 by interfacial engineering

The interfacial enhanced ferromagnetism in maganite/ruthenate system is regarded as a promising path to broaden the potential of oxide-based electronic device applications. Here, we systematically studied the physical properties of LaLa_1-xCa_xMnO₃/SrRuO₃ superlattices and compared them with the LaLa_1-xCa_xMnO₃ thin films and bulk compounds. The LaLa_1-xCa_xMnO₃/SrRuO₃ superlattices exhibit significant enhancement of Curie temperature (T_C) beyond the corresponding thin films and bulks. Based on these results, we constructed an extended phase diagram of LaLa_1-xCa_xMnO₃ under interfacial engineering. We considered the interfacial charge transfer and structural proximity effects as the origin of the interface-induced high T_C. The structural characterizations revealed a pronounced increase of B-O-B bond angle, which could be the main driving force for the high T_C in the superlattices. Our work inspires a deeper understanding of the collective effects of interfacial charge transfer and structural proximity on the physical properties of oxide heterostructures.     

钙钛矿型氧化物透明导电薄膜La:SrTiO_3的制备、结构与物性研究

本文采用脉冲激光沉积法于不同沉积温度与衬底制备了一系列的La0.05 Sr0.95 TiO3(LSTO)单晶透明导电薄膜.实验主要研究了高温高氧压条件下沉积的LSTO薄膜的结构及电、光学性质.它们具有良好的外延结构,表现出很好的透明、导电性质.对电阻率拟合发现其导电机制符合电子.电子散射机制.由于制备条件与其它多种钙钛矿型氧化物薄膜一致,可广泛集成应用.用其作为电极所制备的PbZr0.52 Ti0.48O3(PZT)外延铁电电容器,具有很好的电滞回线和透光性.     

(K,Na)NbO_3基无铅压电薄膜的制备与表征（英文）

我们采用脉冲激光沉积法,在SrTiO3(001)衬底上以La0.7Sr0.3MnO3作为底电极,制备得单相的0.95(Na0.49K0.49Li0.02)(Nb0.8Ta0.2)-0.05CaZrO3外延薄膜.采用X射线衍射、X射线光电子能谱,电滞回线和介电常数测试分别表征了LKNNT-CZ薄膜的微观结构、表面元素价态和铁电/介电性能.结果表明:(1)制备得到的LKNNT-CZ薄膜的元素组成与靶材相同;(2)在4伏到10伏内均可以获得线型良好且饱和的电滞回线,当驱动电压为10V时,薄膜的剩余极化达到12.4μC/cm2,矫顽电场为102.3kV/cm;(3)薄膜在1kHz频率下的介电常数高达1185.