利用半导体光放大器进行光脉冲消基座的理论研究

提出了一种利用半导体光放大器(SOA)联合可调谐光滤波器进行高阶孤子压缩消基座的新方法.进行了详尽的理论分析和优化.数值计算表明,在一定条件下,这种方法能够在不展宽脉冲的前提下,对基座进行有效地抑制.     

Novel approach to reduce the pattern effect in 10-Gb/s clock recovery

A Fabry-Perot(F-P)etalon and a semiconductor optical amplifier(SOA)were combined to preprocess thedata signals before clock recovery.With this technology in the 10-Gb/s clock recovery utilizing injectionmode-locked laser(IMLL)based on SOA,the amplitude fluctuation and timing jitters caused by thepattern effect in recovered clock pulses were greatly reduced,experimentally.It also demonstrated thatclock could be recovered from the very degraded signals.     

The effect of SRS on pilot-tone detection technique in DWDM system

A math model that can describe the effect of stimulated Raman scattering (SRS) on pilot-tone detection technique is proposed. Thrugh numerical simulation, it is shown that the effect of SRS could produce ghost-tones. The power of ghost-tones was larger for the channels separated further from the real-tone.The power ratio between real-tone and ghost-tones increases linearly with the increase of transmission length when propagation distance longer than 300 km.     

Mitigation of signal quality degradation induced by PMD using synchronous modulation

In-line synchronous modulation as a way of mitigating the signal quality degradation induced by polar ization mode dispersion(PMD)was experimentally studied using 10-Gb/s return to zero signal.Bit error rate of the degraded signal and the synchronously modulated signal under the differential group delay(DGD)values of 10,20,34,and 70 ps was measured and compared.The experimental results showed that in-line synchronous modulation is useful to mitigate the signal quality degeneration induced by PMD.1-dB power penalty reduction was obtained even when the PMD was as high as 70％ of the bit interval.The limitation of method is also discussed.     

二维过渡金属硫族化合物在超级电容器中的研究进展

近年来, 过渡金属硫族化合物(TMDs)作为一种新兴的二维材料, 因其独特的层状结构及电学特性成为超级电容器电极材料的理想候选者之一. 本文介绍了二维TMDs的常用合成方法, 阐述了钼基、 钨基和钒基等TMDs在超级电容器中的研究进展, 分析了形貌、 尺寸和改性方法等因素对TMDs材料电化学性能的影响, 并对TMDs在超级电容器领域的工业化应用和挑战进行了总结与展望.     

4,5-二氮芴-9-酮及其衍生物的研究进展

介绍了4,5-二氮芴-9-酮及其衍生物的合成方法及其在新型催化剂和光电材料等方面的研究进展。标题化合物及其衍生物是一类结构、性质特殊的化合物,提示其更广泛的性质和应用还有待人们更深入研究。     

1,10-邻菲咯啉取代苷脲及其一维Ag(Ⅰ)配位聚合物的合成及晶体结构

合成了1,10-邻菲咯啉取代苷脲(L),并用L与硝酸银反应得到一维配位聚合物[AgLNO3]n,利用X-射线衍射方法测定了它们的晶体结构。L:单斜晶系,空间群P21/c,a=1.8545nm,b=1.2504nm,c=1.2818nm,β=108.476°,V=2.8192nm3,Z=7,F(000)=1176,finalGOF=1.093,R1=0.060,wR2=0.1654,。[AgLNO3]n:正交晶系,空间群Pca21,a=1.55149nm,b=1.04907nm,c=1.15892nm,V=1.8863nm3,Z=4,F(000)=1024,finalGOF=1.038,R1=0.042,wR2=0.110。晶体结构表明配体L与Ag髣形成了一维配位聚合物[AgLNO3]n。     

基于均匀设计抽样遗传算法求解背包问题

众所周知,遗传算法的运行机理及特点是具有定向制导的随机搜索技术,其定向制导的原则是:导向以高适应度模式为祖先的"家族"方向.以此结论为基础,利用均匀设计抽样的理论和方法,对遗传算法中的交叉操作进行了重新设计,给出了一个新的GA算法,称之为均匀设计抽样遗传算法.最后将均匀设计抽样遗传算法应用于求解背包问题,并与简单遗传算...     

Von-Mises统计量的Edgeworth展开和随机加权逼近

文［１］讨论了Ｖｏｎ－Ｍｉｓｅｓ统计量的一种能达到Ｏ１ｎ的精确性的随机加权逼近，本文则给出了这种统计量的一阶Ｅｄｇｅｗｏｒｔｈ展开和一种能达到ｏ１ｎ的精确性的新的随机加权逼近．