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数理化   4篇
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设计并制备了具有单边大光腔结构的半导体电吸收(electroabsorption,EA)调制器.模拟和测试的结果均表明:单边大光腔结构能有效地改善EA调制器的光场分布,使椭圆形的近场光斑变得圆形化,从而达到与圆形模式光纤之间的匹配,有利于提高耦合效率.  相似文献   
2.
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm^2 and a slope efficiency of 0.02 W/A. The 1542nm laser output exits mainly from the Si waveguide.  相似文献   
3.
We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.  相似文献   
4.
We report an eight-channel silicon evanescent laser array operating at continuous wave under room temperature conditions using the selective-area metal bonding technique.The laser array is realized by evanescentl.y coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed Bragg reflector gratings.The lasers have emission peak wavelengths in a range of 1537-1543 nm with a wavelength spacing of about 1.0 nm.The thermal impedances Z_T of these hybrid lasers are evidently lower than those DFB counterparts  相似文献   
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