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Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique 下载免费PDF全文
Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE). 相似文献
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This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) by applying pulsed stress to the device. Low-temperature layer of Al2O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition (ALD). For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD Al2O3. A small increase in Id in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Id - Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD Al2O3. 相似文献
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研究了钝化在抑制电流崩塌的同时,会引起HEMT器件击穿电压的下降.而采用场板结构的AlGaN/GaN场板HEMT器件(FP-HEMT)的击穿电压从46V提高到了148V,表明了场板对提高击穿电压有显著作用(3倍以上).接着,比较了FP-HEMT器件与常规HEMT器件,钝化后HEMT器件在应力前后的电流崩塌程度,得出了采用场板结构比之钝化对器件抑制电流崩塌有更明显作用的结论.从理论上和实验上都表明,采用场板结构能够很好解决提高击穿电压与抑制电流崩塌之间的矛盾.
关键词:
GaN
场板
击穿电压
电流崩塌 相似文献
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利用方势阱模型对InxGa1-xN/GaN MQWs结构的光特性进行了量子力学定性理论分析.并在MO源流量恒定条件下,在570℃~640℃范围内进行了不同生长温度的多量子阱制备实验,对InxGa1-xN制备过程中的In组份掺入效率的温度依赖关系进行研究.通过对制备样品的PL谱测量分析,得到了587℃~600℃的In组份最佳掺入温度区间. 相似文献
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We report a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with atomic layer deposited (ALD) Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 (2005) 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented. 相似文献
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The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET's 下载免费PDF全文
The anomalous phenomenon of generation current ICD in the lightly doped drain (LDD) nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated (A) and frozen (F) traps for the VD-step mode: The A traps contributes to ICD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption. 相似文献
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通过对功率金属氧化物半导体场效应晶体管在静态应力下的负偏置温度不稳定性的实验研究, 发现器件参数的退化随时间的关系遵循反应扩散模型所描述的幂函数关系, 并且在不同栅压应力下, 实验结果中均可观察到平台阶段的出现. 基于反应扩散理论的模型进行了仿真研究, 通过仿真结果分析和验证了此平台阶段对应于反应平衡阶段, 并且解释了栅压应力导致平台阶段持续时间不同的原因.
关键词:
功率金属氧化物半导体场效应晶体管
负偏置温度不稳定性
反应扩散模型 相似文献