C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度

本文对用C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度的方法进行了理论和实验分析. pn结的存在所造成的埋沟MOS结构C-V曲线的畸变为沟道载流子浓度的提取带来一些问题. SiC/SiO₂界面上界面态的存在也会使提取出的数值与实际数值产生偏差. 本文首先从理论上分别分析了沟道深度和界面态对沟道载流子浓度提取结果的影响，然后对两种沟道深度的埋沟MOS结构C-V曲线进行了测试，提取出了沟道掺杂浓度. 在测试中，采用不同的扫描速率，分析了界面态对提取结果的影响. 理论分析结果和实验测 关键词： C-V法 SiC 隐埋沟道MOSFET 沟道载流子浓度     

界面态电荷对n沟6H-SiC MOSFET场效应迁移率的影响

针对界面态密度在禁带中的不均匀分布，分析了界面态电荷对n沟6H碳化硅MOSFET场效应迁移率的影响.分析结果显示，界面态电荷使n沟碳化硅器件的场效应迁移率明显降低.并给出了实验测定的场效应迁移率和反型层载流子迁移率的比值与界面态密度之间关系. 关键词： 碳化硅 界面态 反型层迁移率 场效应迁移率     

6H-SiC Schottky barrier source／drain NMOSFET with field-induced source／drain extension

A novel SiC Schottky barrier source/drain NMOSFET (SiC SBSD-NMOSFET) with field-induced source/drain (FISD) extension is proposed and demonstrated by numerical simulation for the first time. In the new device the FISD extension is induced by a metal field-plate lying on top of the passivation oxide, and the width of Schottky barrier is controlled by the metal field-plate. The new structure not only eliminates the effect of the sidewalls but also significantly improves the on-state current. Moreover, the performance of the present device exhibits very weak dependence on the widths of sidewalls.     

Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs

Between source/drain and gate of SiC Schottky barrier source/drain MOSFET (SiC SBSD-MOSFET), there must be a sidewall as isolation. The width of sidewall strongly affects on the device performance. In this paper the effect of sidewall on the performance of 6H-SiC SBSD-NMOSFET is simulated with the 2D simulator MEDICI. The simulated results show that a sidewall with width less than 0.1μm slightly affects the device performance. However, when the width of sidewall exceeds 0.1μm, the conduction does not occur until the drain voltage is high enough and saturation current sharply decreases. The effect of the sidewall on device performance can be reduced by decreasing the doping concentration in the epitaxial layer.