Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates

Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator(TR-SOI) substrates are studied. It is found that the resistivity of the trap-rich layer of generation 2(TR-G2)is higher than that of generation 1(TR-G1), although the crystal morphologies of the trap rich layers are the same. In addition, the rf performance of two-generation TR-SOI substrates is investigated by coplanar waveguide lines and inductors. The results show that both the rf loss and the second harmonic distortion of TR-G2 are smaller than those of TR-G1. These results can be attributed to the higher resistivity values of both the trap-rich layer and the high-resistivity silicon(HR-Si) substrate of TR-G2. Moreover, the rf performance of the TR-SOI substrate with thicker buried oxide is slightly better. The second harmonics of various TR-SOI substrates are simulated and evaluated with the harmonic quality factor model as well. It can be predicted that the TR-SOI substrate will see further improvement in rf performance if the resistivities of both the trap-rich layer and HR-Si substrate increase.     

多晶硼和含硼金属玻璃的表面广延能量损失精细结构研究

本文用反射型芯能级电子能量损失谱的广延部分,即所谓广延能量损失精细结构,研究了硼原子在多晶硼、非晶Fe₈₀B₂₀和Fe_78.5Si₅B_16.5样品表面的行为和这些样品表面的微观结构。测得的谱显示的振荡结构在硼k壳层吸收边以上延续约300电子伏。利用我们实验室发展的计算程序,对所测得的广延能量损失精细结构(SEELFS)谱进行数据分析,得到了被测样品受激原子附近的径向分布函数(RDF);经相移修正后 关键词：