Highly Efficient Simplified Organic Light-Emitting Diodes Utilizing F4-TCNQ as an Anode Buffer Layer

We demonstrate that the electroluminescent performances of organic light-emitting diodes （OLEDs） are significantly improved by evaporating a thin F4-TCNQ film as an anode buffer layer on the ITO anode. The optimum Alq3-based OLEDs with F4-TCNQ buffer layer exhibit a lower turn-on voltage of 2.6 V, a higher brightness of 39820cd/m^2 at 13 V, and a higher current efficiency of 5.96cd/A at 6 V, which are obviously superior to those of the conventional device （turn-on voltage of 4.1 V, brightness of 18230cd/m^2 at 13 V, and maximum current efficiency of 2.74calla at 10 V）. Furthermore, the buffered devices with F4-TCNQ as the buffer layer could not only increase the efficiency but also simplify the fabrication process compared with the p-doped devices in which F4-TCNQ is doped into β-NPB as p-HTL （3.11 cd/A at 7 V）. The reason why the current efficiency of the p-doped devices is lower than that of the buffered devices is analyzed based on the concept of doping, the measurement of absorption and photoluminescence spectra of the organic materials, and the current density-voltage characteristics of the corresponding hole-only devices.     

Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer

The efficiency of organic light-emitting devices (OLEDs) based on N,N'-bis(1-naphthyl)-N,N'-diphenyl-N,1'-biphenyl-4,4'-diamine (NPB) (the hole transport layer) and tris(8-hydroxyquinoline) aluminum (Alq₃) (both emission and electron transport layers) is improved remarkably by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm², which is about 86% higher than that of an ordinary device (without a LiF interlayer, 3.2 cd/A). An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency.     

利用Cs基衍生物作为n型掺杂剂改善蓝色有机发光二极管的效率

利用两种Cs基衍生物碳酸铯(Cs2CO3)和醋酸铯(CH3COOCs)作为n型掺杂剂掺入到一种新型的电子传输材料2,9-二(2-萘基)-4,7-二苯基-1,10-菲啰啉(NBPhen)中来提高有机发光二极管(OLEDs)的效率.实验结果表明:器件的驱动电压明显降低,并且优化后得到的Cs基n型掺杂器件(ITO/β-NPB/CBP:5%(w)N-BDAVBi/NBPhen/NBPhen:Cs2CO3(or CH3COOCs)/Al)呈现出较好的电致发光性能,在14 V时电流密度分别为551.80和527.88 mA·cm-2,对应的亮度分别达到39750和39820 cd·m-2,电流效率在亮度为10000 cd·m-2时分别为14.60 cd·A-1(Cs2CO3掺杂)和14.40 cd·A-1(CH3COOCs掺杂),这些参数明显优于传统器件的发光性能(ITO/β-NPB/CBP:5%(w)N-BDAVBi/NBPhen/Cs2CO3/Al,其在14 V时电流密度为312.39 mA·cm-2,对应的亮度为25190 cd·m-2;电流效率在亮度为10000 cd·m-2时为9.45 cd·A-1.此外,基于有机半导体掺杂原理和器件的能级结构对n型掺杂器件效率提高的原因进行了分析.     

利用色彩转换法制备高色稳定性的柔性白色有机电致发光器件

本文利用色转换方法,将高效的蓝色柔性有机电致发光器件(flexible organic light emitting devices, FOLEDs)与色转换材料(color conversion material, CCM)相结合,制备了柔性白色有机电致发光器件(white organic light emitting devices, WOLEDs).首先利用2, 3, 5, 6-Tetrafluoro-7, 7, 8, 8-tetracyano-quinodimethane (F4-TCNQ)和4, 4', 4"-tris-(N-3-methylphenyl-N-phenylamino) tripheny-lamine (m-MTDATA)组成的多量子阱(multiple quantum well, MQW)结构作为空穴注入层(hole injection layer, HIL)结合新型蓝光材料N⁶, N⁶, N¹², N¹²-tetrap-tolylchrysene-6, 12-diamine (NCA)制备出高效的蓝光FOLEDs,然后将其与色转换材料4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) 结合,通过沉积不同厚度的CCM来优化白光器件的发光光谱,获得了色稳定性较高的白光. 实验结果表明:在驱动电压为7 V, DCJTB的厚度为120 nm时得到较接近白光等能点的色坐标 (0.33, 0.27),且当驱动电压由6 V升至11 V 时,器件的色坐标变化仅为(±0.02, ±0.02), 表现出高色稳定性.     

Highly efficient blue fluorescent OLEDs with doped double emitting layers based on p—n heterojunctions

We fabricate a kind of novel efficient blue fluorescent organic light emitting device(OLED) based on p-n heterojunctions composed of hole transporting layer(HTL) N,N ’-bis(naphthalen-1-yl)-N,N ’-bis(phenyl)-benzidine(NPB) and electron transporting layer(ETL) 4,7-diphnenyl-1,10-phenanthroline(BPhen),into which a new blue material,DNCA(a derivation of N 6,N 6,N 12,N 12-tetrap-tolylchrysene-6,12-diamine),is partially doped simultaneously,and double emitting layers are configured.With a turn-on voltage of 2.6 V at 1 cd/m 2,this type of OLED presents a maximum luminance efficiency(η max) of 8.83 cd/A at 5.818 mA/cm 2 and a maximum luminance of over 40000 cd/m 2.Meanwhile,the Commission Internationale De L’Eclairage(CIE) coordinates of this device change slightly from(0.13,0.27) to(0.13,0.23) as the driving voltage increases from 3 V to 11 V.This improvement in the electroluminescent characteristics is attributed mainly to the ideal p-n heterojunction which can confine and distribute excitons evenly on two sides of the heterojunction interface so as to improve the carrier combination rate and expand the light-emitting region.