V3+:YAG晶体的生长、色心与光谱性能研究

采用石墨电阻加热的温梯法生长了V:YAG晶体,晶体的不同部位呈现两种不同的颜色:浅绿色和黄褐色.通过对比分析不同颜色V:YAG晶体的室温吸收光谱,推断出石墨发热体高温下扩散出来的C可以起到还原作用,提高晶体中V3+tetra离子的浓度,同时诱导了F心的形成.在1300℃下,对不同颜色的V:YAG晶体进行真空退火处理,发现处于八面体格位中的V3+离子在热激发作用下与近邻的四面体格位Al3+离子存在置换反应,由此产生一定浓度的四面体格位V3+离子.同时,F心在退火过程中被完全消除,释放出来的自由电子被高价态的V离子俘获,可以进一步提高晶体中四面体格位V3+离子的浓度.     

U：CaF2晶体的分凝特性与光谱性质

应用TGT法生长了直径为75mm的U：CaF2晶体，宏观上透明完整.应用公式K0=Cs/Cl计算了U在CaF2晶体中的分凝系数等于0.53.应用溶质分布一般公式Cs=K0C0(1-g)K0-1，计算U的浓度分布与测量值，数值符合说明晶体生长过程接近平衡状态.分析不同条件下生长的U: CaF2晶体的晶胞参数和吸收光谱，结果表明生长气氛决定U的价态及电荷补偿机理：无PbF2存在的条件下，U为+4价，晶体呈绿色；PbF2的加入起到氟化去氧作用，U倾向于以离子半径最接近于Ca2+的U3+存在，晶体呈红色.从晶体生长开始到结束的部位，U3+:CaF2晶体吸收光谱的峰位不变，峰强呈现与U浓度相同的增加趋势.U3+:CaF2晶体外层厚约5mm处呈黄色，含有U3+和U2+的混合价态离子，其原理是石墨坩埚的还原作用通过单质铅，使部分的U3+进一步还原成了U2+. 关键词： 铀 氟化钙晶体 分凝系数 晶胞参数     

Silver nanorods absorber for passively Q-switched Nd,Gd:CaF_2 laser

Using a novel silver nanorods absorber with a localized surface plasmon resonance absorption peak at 1.06 μm,we obtain a diode-pumped passively Q-switched(PQS) Nd,Gd:CaF_2 disordered crystal laser output. Its PQS pulse laser performances are studied comprehensively and systematically in this Letter. The single pulse energy and peak power can be attained to 2.15 μJ and 2.06 W, respectively.     

掺Yb3+氧化镧钇透明激光陶瓷的光谱特性

采用传统陶瓷烧结工艺,在无压还原气氛下低温制备出透明性良好的掺Yb3+氧化镧钇透明激光陶瓷,测试了其在室温下的吸收光谱、发射光谱和荧光寿命.结果表明,掺Yb3+氧化镧钇透明激光陶瓷的吸收系数随着Yb3+掺杂浓度的增加而增大,最强吸收峰974nm处的吸收截面为0.90～1.12×10－20 cm2;主发射峰1 032 nm和1 075 nm处的发射截面分别为1.05×10－20 cm2和0.87×10－20 cm2; Yb3+掺杂浓度为5at.%时荧光寿命为1.38 ms,并随Yb3+掺杂浓度的增加而减小;当Yb3+掺杂浓度超过10at.%时,样品中存在严重的浓度猝灭.产生浓度猝灭的原因是高掺杂时离子间存在合作上转换和能量转移.     

Powder synthesis and spectroscopic properties of ytterbium-doped yttrium oxysulfide

Ytterbium-doped yttrium oxysulfide(Yb:Y_2O_2S)has been synthesized by solid-state reaction with sulfide flux.Diffuse reflection and emission spectra have been measured in order to determine the crystal field splitting of Yb~(3 )ion in the YOS lattice.According to the crystal-field levels probed in the spectra,the crystal field splitting of ~2F_(7/2)manifold of Yb~(3 )ion in YOS is 709 cm~(-1),which is large enough for the quasi-three-level laser operation of Yb~(3 )ion.Emission peak position,width,full-width at half maximum (FWHM),and normalized intensity of Yb:YOS are fitted from its emission spectrum.For comparison, relevant data of 5.4 at.-% Yb:YAG is also provided.     

退火处理对W:Bi4Ge3O12和Bi12GeO20晶体发光性能的影响

通过提拉法制备了W:Bi4 Ge3 O12和Bi12GeO20晶体,测试了晶体的吸收光谱、光致发光谱和发光衰减时间等.W:Bi4 Ge3 O12的可见光发光强度比纯Bi4 Ge3 O12有所增强,而且N2中退火处理对W:Bi4Ge3O12发光有进一步增强作用.Bi12GeO20在N2中退火处理后在745 nm附近有发光...     

掺杂的Bi4Ge3O12晶体的近红外发光性能

生长了Mg、Ca离子掺杂(提拉法)和Cl离子掺杂(坩埚下降法)的Bi₄Ge₃O₁₂(BGO)晶体,测试了晶体样品的吸收谱、光致发光谱和发光衰减时间等。这些掺杂的BGO晶体的可见光发光比纯BGO有所减弱,但在808 nm和980 nm激光二极管(LD)激发下出现了纯BGO几乎没有的近红外发光,归因于改变了能级的Bi离子或可能出现的低价态Bi离子。掺杂对近红外发光的影响跟掺杂离子价态有关,同价态的掺杂离子对近红外发光的影响相差不大。     

Bi2O3-B2O3-BaO玻璃的制备及其近红外发光性能的研究

采用高温熔融法制备了xBi₂O₃-50B₂O₃-(50-x)BaO玻璃, 测定了样品玻璃的近红外光区的发射谱、荧光寿命以及Raman光谱. 在808 nm波长光的激发下, 50Bi₂O₃-50B₂O₃二元玻璃中未观察到近红外发光; 随体系中BaO的加入, 当x为40, 45以及49时, 玻璃样品中观察到了近红外宽带发光现象; BaO含量进一步增加, 当x=10–30时, 近红外发光现象消失; 而当玻璃中Bi浓度很低时, 在0.5Bi₂O₃-50B₂O₃-50BaO及1Bi₂O₃-50B₂O₃-50BaO玻璃中发现了近红外发光现象, 且存在多个发光峰. 对铋离子近红外发光机理进行了初步的探讨.     

Yb:CaF2–YF3 transparent ceramics ultrafast laser at dual gain lines

Yb³⁺:CaF₂-YF₃ transparent ceramics with excellent optical quality was successfully fabricated by hot-pressed method. Pulsed laser properties of this ceramics were investigated for the first time. Laser diode (LD) was applied as the pump source to generate a dual-wavelength mode-locked (ML) laser. The maximum average output power was 310 mW, which represents the highest output power of ultrafast calcium fluoride ceramic laser. The spectrum separated at 1048.9 nm and 1049.7 nm with a total pulse duration of 8.9 ps. The interval period between the beating signals was about 4.3 ps, corresponding to a 0.23 THz beat pulse repetition rate. These results demonstrate its potential in producing dual-wavelength ultrashort pulses. These Yb³⁺:CaF₂-YF₃ ceramics with low-cost and short-preparation period are ideal candidate materials for ultrafast lasers.     

Dual-wavelength synchronously mode-locked Tm-doped bulk laser with terahertz frequency beating

A dual-wavelength synchronously mode-locked homogeneously broadened bulk laser operating at 1985.6 and1989 nm is presented for the first time, to the best of our knowledge, which delivers a maximum output power of 166 m W and a repetition rate of 85 MHz. The pulse duration was measured to be 16.8 ps by assuming a sech~2 pulse shape. The recorded autocorrelation trace showed frequency beating signals with an interval of 3.8 ps and a full width at half-maximum duration of 2 ps, corresponding to an ultrahigh beating frequency of about0.26 THz, which agrees well with the frequency difference of the emitted two spectral peaks. The results indicated that such a kind of dual-wavelength mode-locked Tm:YAlO_3 laser could be potentially used for generating terahertz radiations.