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团簇淀积纳米结构薄膜的计算机模拟 总被引:1,自引:0,他引:1
对团簇的淀积方式作了简介。着重对团簇的淀积过程进行了计算机模拟,从中得出了淀积的尺寸分布与团簇在衬底上的徙动长度有关,而团簇的聚合长大存在一临界尺寸。并给出低能Pb团簇在碳膜表面的徙动长度和聚合的临界尺寸。 相似文献
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对团簇的沉积方式作了简介。着重对团簇的淀积过程进行了计算机模拟,从中得出了淀积的尺寸分布与团簇在衬底上的徒动长度有关,而团簇的聚合长大存在一临界尺寸。并给出低能Pb团簇在碳膜表面的徒动长度和聚事的临界尺寸。 相似文献
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A new method of phase-modulated excimer laser crystallization is adopted to fabricate the patterned nanometer-sized crystalline silicon (nc-Si) dots within the sandwiched structure (a-SiNx:H/a-Si:H/a-SiNx:H) films. The results of transmission electron microscopy, electron diffraction and Raman scattering show the ultra-thin and single-layer nc-Si films were patterned in the lateral direction and the size of crystallites is controlled by the thickness of as-deposited a-Si film in the longitudinal direction. The effects of the laser energy density on the structures of the samples and the crystallization mechanism are discussed. 相似文献
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