Magnetization reversal of Fe ultrathin film on Cu(100)

The magnetization reversal of Fe/Cu(100) ultrathin films grown at room temperature is investigated by using an in situ magneto-optical Kerr effect polarimeter with a magnet that can rotate in a plane of incidence. There occur spin reorientation transitions from out-of-plane to in-plane magnetizations in 8 and 12 monolayers (ML) thick iron films. The coercive fields are observed to be proportional to the reciprocal of the cosine with respect to the easy axis, suggesting that the domain-wall displacement plays a main role in the magnetization reversal process.     

Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization

We present the magnetoresistance measurements of ultrathin Mn5Ge3 films with different thicknesses at low temperatures. Owing to the lattice mismatch between MnsGe3 and Ge （111）, the thickness of MnsGe3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers （MLs）, the magnetoresistance of the Mn5 Ge3 films appears a peak at about 6 kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn5 Ge3 film is a potential material for spin injection.