弯曲导管束在“水窗”及附近软X光的响应测量

测量了弯曲导管对“水窗”波段及其附近的X光响应,圆弧弯曲导管束对X光在“水窗”段有较大传输效率,而对“水窗”之外的高能X光响应较小,研究表明,X光在“水窗”段的响应,可以是在“水窗”之外的高能X光的响应的5倍,这种弯导管有可能用于同步辐射中,“过滤”掉白光高能部分,而直接输出较强的“水窗”段X光.     

X光透镜及其应用

着重介绍了Ｘ光透镜的原理，制作方法，及其在Ｘ光产业中的应用和发展前景。     

POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si

The lifetime spectroscopy of slow positron accelerated with linear accelerator and pulse punch system was first used to analyze the vacancies in the thin surface layer of silicon heavily doped with arsenic. The results demonstrated that no mono-vacancy was detected to support the arsenic-vacancy complex models for explaining the electrical deactivation mechanism of arsenic-heavily-doped silicon.     

Be~9(d,p),(d,t),(d,a)反应研究

本文在E_d=0.1—2.5MeV能量范围内,研究了Be~9(d,p_0)Be~(10)(0),Be~9(d,p_1)Be~(10)(3.368MeV),Be~9(d,t_0)Be~8(0),Be~9(d,α_0)Li~7(0)及Be~9(d,α_1)Li~7(0.478MeV)诸反应。在E_d=0.150,0.220,0.401,0.706,1.005,1.301,1.484,1.750,2.000,2.250和2.500MeV共十一个能量上分别测量了这五群出射粒子在θ_L=10—155°区间的角分布。在θ_L=135°,E_d=0.1—2.5MeV,在θ_L=95°,E_d=0.1—2.2MeV,和在θ_L=112.5°,E_d=0.5—2.5MeV测量了Be~9(d,p_0)Be~(10)的激发函数。在θ_L=135°和112.5°,E_d=1.2MeV,用较厚靶(100—300μg/cm~2)测量了Be~9(d,p_0)Be~(10)(0)反应的截面绝对值,结果为σ_p_0(θ_L=135°)=1.60mb/sr,σ_p_0(θ_L=112.5°)=1.55mb/sr。这样就得到了在此能区内,这五群出射粒子的截面情况。对所得结果进行了一些讨论。     

X射线质量衰减截面和光电截面的高精度测量

利用特征Ｘ射线源系统地测量了Ｓｉ、Ｆｅ、Ｃｕ、Ｙ、Ｉｎ、Ｓｎ等六种元素及ＳｉＨ４的Ｘ射线质量衰减系数,实验误差为±１％． By using the characteristic X ray sources and the Si( Li) detector system, the X ray mass attenuation coefficients for Si,Fe,Cu,Y,In,Sn and SiH 4 have been systematically measured in the energy range of 1.486～29.109 keV. The accuracy of experimental data has been reduced to ±1% .     

硅烷与硅的质量衰减截面实验测量

用高能质子激发单元素靶或化合物靶产生的特征X射线源,系统地测量了1.486—15.165千电子伏能区里硅烷和8.041—29.109千电子伏能区里硅元素的质量衰减系数.不仅在实验上验证了布喇格相加规则在气体化合物中的适用性,而且得到了1.4一6千电子伏能区里硅元素的质量衰减截面,从而填补了硅元素在该能区的数据空白.从实验测得的总截面中减去康普顿散射和漫散射截面,便得到硅元素的光电截面值,并与理论值进行了比较. 关键词：     

测量整体X光透镜性能的一种新方法

为了高效准确地确定整体X光透镜焦斑位置,设计了一种新方法:轴向扫描法.该方法避免了探测系统的死时间问题,可以在大能量范围内同时测量透镜在不同能量点的出口焦距,在确定透镜出口焦距时,测量结果的绝对误差范围在-120μm和120μm之间.实验结果表明:透镜的出口焦距随着能量的增加而增加.     

3.3keV-27.8keV能区Cu的光电截面测量

利用2.5MeV的质子束激发单质金属元素靶或化合物靶产生的K线或L线特征x射线作为x光源,用Si(Li)谱仪系统测得了3.3KeV—27.8keV能区Cu的x射线质量衰减系数,对于较强而孤立的特征x射线峰,衰减系数的实验误差≤1％。在本能区里,由于瑞利散射和康普顿散射的截面很小,因此,由总衰减截面扣除散射截面便得到了光电截面的实验值,与一些早期的实验结果及理论值进行了比较,并作了讨论。     

MASS ATTENUATION COEFFICIENTS FOR ELEMENTS MEASURED WITH CHARACTERISTIC X-RAYS FROM TARGETS EXCITED BY ENERGETIC PROTON

The characteristic X-rays from elemental or compound targets excited by energetic proton are quasi-monochromatic X-ray sources. The advantages of high line/ background ratio, controllable intensity as well as many available energies, make them suitable for applications in many important fields. The total mass attenuation cross sections of yttrium have been systematically measured by using this kind of X-ray source. The accuracy of experimental data has been improved to ±1%, which is much better than that of earlier results. The contributions of the coherent and incoherent scattering crees sections have been calcu-lated in accordance with the present experimental condition. And the total photoelectric cross sections have been obtained by subtracting the scattering cross section from the measured total cross sections. The com-parisons of our experimental results with the available data of earlier investigations as well as with the theo-retical calculations have been presented and discussed.