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光学相控阵光束扫描技术在激光雷达、空间光通信和光开关等领域拥有巨大的应用潜力。微透镜阵列光学相控阵可以通过微透镜阵列间μm量级的相对位移同时对多个出射光束的二维倾斜相位进行调制,从而实现大角度二维光束扫描,具有出射口径大、结构简单、体积小、微惯性、多功能等优点。首先介绍了微透镜阵列光学相控阵的扫描原理,之后对微透镜阵列光学相控阵国内外的发展现状、应用和现阶段存在的问题进行了阐述,最后对微透镜阵列光学相控阵的发展趋势进行了展望。 相似文献
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We report the simulation results on the thickness uniformity of optical coatings deposited on spherical substrates by optimizing the geometric configuration parameters, such as tilting angle of the substrate holder and position of the evaporation source in a 1 000-mm-diameter planetary rotation stage (PRS). We reveal that good film uniformity on convex spherical surfaces or flat substrates, as well as concave surfaces with weak to moderate curvatures can be obtained through appropriate tilting of the substrate holder. For 300-mm-diameter substrates with clear aperture to radius of curvature (CA/RoC) between 0.3 and 0.7, the achievable film uniformity is above 99%. The source position is optimized to achieve good film uniformity. 相似文献
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本文从理论上分析了脉冲光热谱中波长效应。讨论了波长调谐对脉冲光热光谱信号的峰值和时间特性的影响。 相似文献
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SiC以优异的物理性能和良好的工艺性能,逐渐成为大型空间成像光学系统主镜的首选轻量化光学材料. SiC镜坯制备及加工过程中引入的亚表面缺陷会严重影响最终的镜面质量以及光学系统的成像品质.针对SiC材料亚表面缺陷的检测问题,本文采用光热辐射技术进行分析:分别建立均匀样品的单层理论模型和含空气层缺陷的三层理论模型,用于计算无缺陷和存在缺陷区域的光热辐射信号.通过对三层理论模型信号的相位仿真分析,提出利用相位差-频率曲线的特征频率估算缺陷深度的经验公式;利用光热辐射装置测量存在亚表面缺陷的SiC样品,分析缺陷区域的光热辐射信号分布,利用经验公式计算缺陷深度,并与缺陷实际深度分布进行对比分析.实验与计算结果显示,光热辐射技术能有效探测SiC镜坯的亚表面缺陷及其形貌,并且对于界面与样品相对平行且较为平缓的亚表面缺陷,其缺陷深度可通过经验公式准确确定. 相似文献
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方波调制时的光热光束偏转理论 总被引:2,自引:0,他引:2
本文叙述了加热光束光强以方波调制时的光热光束偏转理论,讨论了偏转信号值与加热光功率、光斑半径,两光点的相对位置及调制频率等的关系并与实验结果比较,其结果是定性一致的. 相似文献
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An approach for determining the optical constants of the weakly absorbing substrate is developed and applied to obtain the parameters of CaF2 and fused silica substrates in deep ultraviolet (DUV) and vacuum ultraviolet (VUV) range. A method for extracting the optical constants of thin films deposited on strongly absorbing substrate, which is based on the reflectance spectra measured at different angles of incidence, is also presented. The optical constants are determined by fitting the measured spectra to the theoretical models. The proposed method is applied to determine the refractive index and extinction coefficient (n, k) of MgF2 film deposited on silicon substrate by electron beam evaporation with substrate temperature 300 ℃ and deposition rate 0.2 nm/s. The determined n, k values at 193 nm are 1.433 and 9.1×10-4, respectively. 相似文献
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