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Effect of Post-Annealing on Microstructural and Electrical Properties of N^+Ion-Implanted into ZnO:In Films 下载免费PDF全文
We fabricate p-type conductive ZnO thin films on quartz glass substrates by codoping of In-N using radio frequency magnetron sputtering technique together with the direct implantation of acceptor dopants (nitrogen). The effects of thermal annealing on the structure and electrical properties of the ZnO films are investigated by an x-ray diffractometer (XRD) and a Hall measurement system. It is found that the best p-type ZnO film subjected to annealed exhibits excellent electrical properties with a hole concentration of 1.22 × 10^18 cm^-3, a Hall mobility of 2.19 cm^2 V^-1 s^- 1, and a low resistivity of about 2.33 Ωcm, indicating that the presence of In may facilitates the incorporation of N into ZnO thin films. 相似文献
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采用线性化处理、拓扑映射及数值计算相结合的方法,求解了离子辐照下各向同性晶体薄片中缺陷浓度和温度满足的非线性微分方程组,证明了当可控参量,即缺陷产生速度和恒温箱温度处于某些范围时.会出现缺陷浓度和温度的周期性振动这种时间耗散结构.研究了自振频率与辐射条件和晶体性质的依赖关系,并以硅晶体薄片为例.求出了自振频域及特定的几个自振频率和自振振幅. 相似文献
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本文在时域内处理三能级量子系统(稀薄气体的分子振动能级)和红外激光场之间的相互作用.指出Eloch-Maxwell半径典方程在转动波近似下可化简成等价的实函数微分方程.本文研究了速率方程在长脉冲和短脉冲条件下的近似解,证明了相干短脉冲在等间隔三能级系统中传播的面积定理.作为实际应用,本文导出了分离同位素时分离系数的计算公式和用短脉冲的选择性激发同位素必须满足的条件以及激发速率的计算方法. 相似文献
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